Room-temperature cw 1.5 μm InGaAlAs/InP vertical-cavity laser with high efficiency

M. Ortsiefer; R. Shau; G. Boehm; F. Koehler; M. C. Amann

Room-temperature cw 1.5 μm InGaAlAs/InP vertical-cavity laser with high efficiency

M. Ortsiefer, R. Shau, G. Boehm, F. Koehler, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

The realization of high-performance monolithic vertical-cavity surface-emitting lasers (VCSELs) on InP for the 1.5 μm wavelength range was demonstrated. Significant progress was achieved by applying a novel device structure with strong built-in lateral current and optical confinement.

Original language	English
Pages	679-680
Number of pages	2
State	Published - 2000
Event	Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA Duration: 7 May 2000 → 12 May 2000

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO 2000)
City	San Francisco, CA, USA
Period	7/05/00 → 12/05/00

Cite this

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title = "Room-temperature cw 1.5 μm InGaAlAs/InP vertical-cavity laser with high efficiency",

abstract = "The realization of high-performance monolithic vertical-cavity surface-emitting lasers (VCSELs) on InP for the 1.5 μm wavelength range was demonstrated. Significant progress was achieved by applying a novel device structure with strong built-in lateral current and optical confinement.",

author = "M. Ortsiefer and R. Shau and G. Boehm and F. Koehler and Amann, {M. C.}",

year = "2000",

language = "English",

pages = "679--680",

note = "Conference on Lasers and Electro-Optics (CLEO 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

}

TY - CONF

T1 - Room-temperature cw 1.5 μm InGaAlAs/InP vertical-cavity laser with high efficiency

AU - Ortsiefer, M.

AU - Shau, R.

AU - Boehm, G.

AU - Koehler, F.

AU - Amann, M. C.

PY - 2000

Y1 - 2000

N2 - The realization of high-performance monolithic vertical-cavity surface-emitting lasers (VCSELs) on InP for the 1.5 μm wavelength range was demonstrated. Significant progress was achieved by applying a novel device structure with strong built-in lateral current and optical confinement.

AB - The realization of high-performance monolithic vertical-cavity surface-emitting lasers (VCSELs) on InP for the 1.5 μm wavelength range was demonstrated. Significant progress was achieved by applying a novel device structure with strong built-in lateral current and optical confinement.

UR - http://www.scopus.com/inward/record.url?scp=0034546451&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034546451

SP - 679

EP - 680

T2 - Conference on Lasers and Electro-Optics (CLEO 2000)

Y2 - 7 May 2000 through 12 May 2000

ER -

Room-temperature cw 1.5 μm InGaAlAs/InP vertical-cavity laser with high efficiency

Abstract

Conference

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