Room-Temperature 2.81-μm Continuous-Wave Operation of GaInAsSb-AlGaAsSb Laser

M. Grau; C. Lin; M. C. Amann

doi:10.1109/LPT.2003.823094

Room-Temperature 2.81-μm Continuous-Wave Operation of GaInAsSb-AlGaAsSb Laser

M. Grau
, C. Lin
, M. C. Amann

Chair of Semiconductor Technology

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

GaInAsSb-AlGaAsSb multiple quantum-well (QW) lasers with an emission wavelength of 2.81 μm are reported. The ridge waveguide lasers with highly strained QWs show continuous-wave laser emission up to 25°C; in pulsed mode, the lasers operate up to 60°C. For pulsed operation, a threshold current density of 360 A/cm² is found for devices with 30-μm stripe width and 2-mm cavity length at room temperature. A low threshold current density at infinite length of 248 A/cm² is derived.

Original language	English
Pages (from-to)	383-385
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	2
DOIs	https://doi.org/10.1109/LPT.2003.823094
State	Published - Feb 2004

Keywords

GaInAsSb
Midinfrared lasers
Quantum-well (QW) lasers
Semiconductor lasers

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10.1109/LPT.2003.823094

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title = "Room-Temperature 2.81-μm Continuous-Wave Operation of GaInAsSb-AlGaAsSb Laser",

abstract = "GaInAsSb-AlGaAsSb multiple quantum-well (QW) lasers with an emission wavelength of 2.81 μm are reported. The ridge waveguide lasers with highly strained QWs show continuous-wave laser emission up to 25°C; in pulsed mode, the lasers operate up to 60°C. For pulsed operation, a threshold current density of 360 A/cm2 is found for devices with 30-μm stripe width and 2-mm cavity length at room temperature. A low threshold current density at infinite length of 248 A/cm2 is derived.",

keywords = "GaInAsSb, Midinfrared lasers, Quantum-well (QW) lasers, Semiconductor lasers",

author = "M. Grau and C. Lin and Amann, \{M. C.\}",

year = "2004",

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doi = "10.1109/LPT.2003.823094",

language = "English",

volume = "16",

pages = "383--385",

journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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TY - JOUR

T1 - Room-Temperature 2.81-μm Continuous-Wave Operation of GaInAsSb-AlGaAsSb Laser

AU - Grau, M.

AU - Lin, C.

AU - Amann, M. C.

PY - 2004/2

Y1 - 2004/2

N2 - GaInAsSb-AlGaAsSb multiple quantum-well (QW) lasers with an emission wavelength of 2.81 μm are reported. The ridge waveguide lasers with highly strained QWs show continuous-wave laser emission up to 25°C; in pulsed mode, the lasers operate up to 60°C. For pulsed operation, a threshold current density of 360 A/cm2 is found for devices with 30-μm stripe width and 2-mm cavity length at room temperature. A low threshold current density at infinite length of 248 A/cm2 is derived.

AB - GaInAsSb-AlGaAsSb multiple quantum-well (QW) lasers with an emission wavelength of 2.81 μm are reported. The ridge waveguide lasers with highly strained QWs show continuous-wave laser emission up to 25°C; in pulsed mode, the lasers operate up to 60°C. For pulsed operation, a threshold current density of 360 A/cm2 is found for devices with 30-μm stripe width and 2-mm cavity length at room temperature. A low threshold current density at infinite length of 248 A/cm2 is derived.

KW - GaInAsSb

KW - Midinfrared lasers

KW - Quantum-well (QW) lasers

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/1442264081

U2 - 10.1109/LPT.2003.823094

DO - 10.1109/LPT.2003.823094

M3 - Article

AN - SCOPUS:1442264081

SN - 1041-1135

VL - 16

SP - 383

EP - 385

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -

Room-Temperature 2.81-μm Continuous-Wave Operation of GaInAsSb-AlGaAsSb Laser

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Keywords

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