Role of TiO2 surface passivation on improving the performance of P-InP photocathodes

Yongjing Lin; Rehan Kapadia; Jinhui Yang; Maxwell Zheng; Kevin Chen; Mark Hettick; Xingtian Yin; Corsin Battaglia; Ian D. Sharp; Joel W. Ager; Ali Javey

doi:10.1021/jp5107313

Role of TiO₂ surface passivation on improving the performance of P-InP photocathodes

Yongjing Lin, Rehan Kapadia, Jinhui Yang, Maxwell Zheng, Kevin Chen, Mark Hettick, Xingtian Yin, Corsin Battaglia, Ian D. Sharp, Joel W. Ager, Ali Javey

Research output: Contribution to journal › Article › peer-review

128 Scopus citations

Abstract

The role of TiO₂ thin films deposited by atomic layer deposition on p-InP photocathodes used for solar hydrogen generation was examined. It was found that, in addition to its previously reported corrosion protection role, the large valence band offset between TiO₂ and InP creates an energy barrier for holes reaching the surface. Also, the conduction band of TiO₂ is well-aligned with that of InP. The combination of these two effects creates an electron-selective contact with low interface recombination. Under simulated solar illumination in HClO₄ aqueous electrolyte, an onset potential of >800 mV vs RHE was achieved, which is the highest yet reported for an InP photocathode.

Original language	English
Pages (from-to)	2308-2313
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	119
Issue number	5
DOIs	https://doi.org/10.1021/jp5107313
State	Published - 5 Feb 2015
Externally published	Yes

Access to Document

10.1021/jp5107313

Cite this

@article{4e22504d88cb427eaab0070ebab09459,

title = "Role of TiO2 surface passivation on improving the performance of P-InP photocathodes",

abstract = "The role of TiO2 thin films deposited by atomic layer deposition on p-InP photocathodes used for solar hydrogen generation was examined. It was found that, in addition to its previously reported corrosion protection role, the large valence band offset between TiO2 and InP creates an energy barrier for holes reaching the surface. Also, the conduction band of TiO2 is well-aligned with that of InP. The combination of these two effects creates an electron-selective contact with low interface recombination. Under simulated solar illumination in HClO4 aqueous electrolyte, an onset potential of >800 mV vs RHE was achieved, which is the highest yet reported for an InP photocathode.",

author = "Yongjing Lin and Rehan Kapadia and Jinhui Yang and Maxwell Zheng and Kevin Chen and Mark Hettick and Xingtian Yin and Corsin Battaglia and Sharp, {Ian D.} and Ager, {Joel W.} and Ali Javey",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = feb,

day = "5",

doi = "10.1021/jp5107313",

language = "English",

volume = "119",

pages = "2308--2313",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - Role of TiO2 surface passivation on improving the performance of P-InP photocathodes

AU - Lin, Yongjing

AU - Kapadia, Rehan

AU - Yang, Jinhui

AU - Zheng, Maxwell

AU - Chen, Kevin

AU - Hettick, Mark

AU - Yin, Xingtian

AU - Battaglia, Corsin

AU - Sharp, Ian D.

AU - Ager, Joel W.

AU - Javey, Ali

PY - 2015/2/5

Y1 - 2015/2/5

N2 - The role of TiO2 thin films deposited by atomic layer deposition on p-InP photocathodes used for solar hydrogen generation was examined. It was found that, in addition to its previously reported corrosion protection role, the large valence band offset between TiO2 and InP creates an energy barrier for holes reaching the surface. Also, the conduction band of TiO2 is well-aligned with that of InP. The combination of these two effects creates an electron-selective contact with low interface recombination. Under simulated solar illumination in HClO4 aqueous electrolyte, an onset potential of >800 mV vs RHE was achieved, which is the highest yet reported for an InP photocathode.

AB - The role of TiO2 thin films deposited by atomic layer deposition on p-InP photocathodes used for solar hydrogen generation was examined. It was found that, in addition to its previously reported corrosion protection role, the large valence band offset between TiO2 and InP creates an energy barrier for holes reaching the surface. Also, the conduction band of TiO2 is well-aligned with that of InP. The combination of these two effects creates an electron-selective contact with low interface recombination. Under simulated solar illumination in HClO4 aqueous electrolyte, an onset potential of >800 mV vs RHE was achieved, which is the highest yet reported for an InP photocathode.

UR - http://www.scopus.com/inward/record.url?scp=84949117524&partnerID=8YFLogxK

U2 - 10.1021/jp5107313

DO - 10.1021/jp5107313

M3 - Article

AN - SCOPUS:84949117524

SN - 1932-7447

VL - 119

SP - 2308

EP - 2313

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 5

ER -

Role of TiO₂ surface passivation on improving the performance of P-InP photocathodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this