Abstract
In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed here show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude. In particular, a 400μm thick "double-p" silicon detector irradiated up to 1×1015n/cm2 delivers a mip signal of about 27000 electrons when operated at 130K and 500V bias. The position resolution of an irradiated microstrip detector, and "in situ" irradiation of a pad detector during operation in the cold are also discussed.
Original language | English |
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Pages (from-to) | 150-154 |
Number of pages | 5 |
Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 461 |
Issue number | 1-3 |
DOIs | |
State | Published - 1 Apr 2001 |
Keywords
- Cryogenic
- Detectors
- Lazarus
- Silicon