Review on the development of cryogenic silicon detectors

L. Casagrande, M. C. Abreu, W. H. Bell, P. Berglund, W. De Boer, K. Borer, S. Buontempo, S. Chapuy, V. Cindro, N. D'Ambrosio, C. Da Viá, S. Devine, B. Dezillie, Z. Dimcovski, V. Eremin, A. Esposito, V. Granata, E. Grigoriev, F. Hauler, E. HeijneS. Heising, S. Janos, L. Jungermann, I. Konorov, Z. Li, C. Lourenco, M. Mikuz, T. O. Niinikoski, V. O'Shea, S. Pagano, V. G. Palmieri, S. Paul, K. Pretzl, P. Rato, G. Ruggiero, K. Smith, P. Sonderegger, P. Sousa, E. Verbitskaya, S. Watts, M. Zavrtanik

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

In this paper, we report on the performance of heavily irradiated silicon detectors operated at cryogenic temperatures. The results discussed here show that cryogenic operation indeed represents a reliable method to increase the radiation tolerance of standard silicon detectors by more than one order of magnitude. In particular, a 400μm thick "double-p" silicon detector irradiated up to 1×1015n/cm2 delivers a mip signal of about 27000 electrons when operated at 130K and 500V bias. The position resolution of an irradiated microstrip detector, and "in situ" irradiation of a pad detector during operation in the cold are also discussed.

Original languageEnglish
Pages (from-to)150-154
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume461
Issue number1-3
DOIs
StatePublished - 1 Apr 2001
Externally publishedYes

Keywords

  • Cryogenic
  • Detectors
  • Lazarus
  • Silicon

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