Response to "critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model - Comment on 'kinetics of the Staebler-Wronski effect in hydrogenated amorphous silicon'" [Appl. Phys. Lett. 54, 398 (1989)]

W. B. Jackson; C. C. Tsai; M. Stutzmann

doi:10.1063/1.100975

Response to "critique of (time)^1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model - Comment on 'kinetics of the Staebler-Wronski effect in hydrogenated amorphous silicon'" [Appl. Phys. Lett. 54, 398 (1989)]

W. B. Jackson, C. C. Tsai, M. Stutzmann

Research output: Contribution to journal › Comment/debate

1 Scopus citations

Original language	English
Pages (from-to)	399-400
Number of pages	2
Journal	Applied Physics Letters
Volume	54
Issue number	4
DOIs	https://doi.org/10.1063/1.100975
State	Published - 1989
Externally published	Yes

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10.1063/1.100975

Cite this

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title = "Response to {"}critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model - Comment on 'kinetics of the Staebler-Wronski effect in hydrogenated amorphous silicon'{"} [Appl. Phys. Lett. 54, 398 (1989)]",

author = "Jackson, {W. B.} and Tsai, {C. C.} and M. Stutzmann",

year = "1989",

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language = "English",

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pages = "399--400",

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Jackson, WB, Tsai, CC & Stutzmann, M 1989, 'Response to "critique of (time)^1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model - Comment on 'kinetics of the Staebler-Wronski effect in hydrogenated amorphous silicon'" [Appl. Phys. Lett. 54, 398 (1989)]', Applied Physics Letters, vol. 54, no. 4, pp. 399-400. https://doi.org/10.1063/1.100975

Response to "critique of (time)^1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model - Comment on 'kinetics of the Staebler-Wronski effect in hydrogenated amorphous silicon'" [Appl. Phys. Lett. 54, 398 (1989)]. / Jackson, W. B.; Tsai, C. C.; Stutzmann, M.
In: Applied Physics Letters, Vol. 54, No. 4, 1989, p. 399-400.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Response to "critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model - Comment on 'kinetics of the Staebler-Wronski effect in hydrogenated amorphous silicon'" [Appl. Phys. Lett. 54, 398 (1989)]

AU - Jackson, W. B.

AU - Tsai, C. C.

AU - Stutzmann, M.

PY - 1989

Y1 - 1989

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U2 - 10.1063/1.100975

DO - 10.1063/1.100975

M3 - Comment/debate

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SN - 0003-6951

VL - 54

SP - 399

EP - 400

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

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Response to "critique of (time)1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model - Comment on 'kinetics of the Staebler-Wronski effect in hydrogenated amorphous silicon'" [Appl. Phys. Lett. 54, 398 (1989)]

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Response to "critique of (time)^1/3 kinetics of defect formation in amorphous Si:H and a possible alternative model - Comment on 'kinetics of the Staebler-Wronski effect in hydrogenated amorphous silicon'" [Appl. Phys. Lett. 54, 398 (1989)]