RESONANT TUNNELING IN MBE-GROWN PNP-GaAs QUANTUM WELL STRUCTURES.

U. Prechtel; Ch Zeller; G. Abstreiter; K. Ploog

RESONANT TUNNELING IN MBE-GROWN PNP-GaAs QUANTUM WELL STRUCTURES.

U. Prechtel, Ch Zeller, G. Abstreiter, K. Ploog

TUM Emeriti of Excellence

Technical University of Munich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The resonant tunneling of electrons between valence band states and discrete subbands in the conduction band is studied in pnp-GaAs quantum well structures. The I(V) characteristics for direct tunneling processes are analyzed theoretically. Experimental results are obtained with pnp-triode structures with specially designed selective contacts. The k// parallel -dependence of the tunneling probability is important for doping concentrations of the order of 2 multiplied by 10**1**8 cm** minus **3.

Original language	English
Title of host publication	Institute of Physics Conference Series
Editors	B. de Cremoux
Pages	339-344
Number of pages	6
Edition	74
State	Published - 1985

Publication series

Name	Institute of Physics Conference Series
Number	74
ISSN (Print)	0373-0751

Cite this

@inproceedings{f9f739234a9e4510af28d27a9ff5bb7c,

title = "RESONANT TUNNELING IN MBE-GROWN PNP-GaAs QUANTUM WELL STRUCTURES.",

abstract = "The resonant tunneling of electrons between valence band states and discrete subbands in the conduction band is studied in pnp-GaAs quantum well structures. The I(V) characteristics for direct tunneling processes are analyzed theoretically. Experimental results are obtained with pnp-triode structures with specially designed selective contacts. The k// parallel -dependence of the tunneling probability is important for doping concentrations of the order of 2 multiplied by 10**1**8 cm** minus **3.",

author = "U. Prechtel and Ch Zeller and G. Abstreiter and K. Ploog",

year = "1985",

language = "English",

isbn = "0854981659",

series = "Institute of Physics Conference Series",

number = "74",

pages = "339--344",

editor = "\{de Cremoux\}, B.",

booktitle = "Institute of Physics Conference Series",

edition = "74",

}

TY - GEN

T1 - RESONANT TUNNELING IN MBE-GROWN PNP-GaAs QUANTUM WELL STRUCTURES.

AU - Prechtel, U.

AU - Zeller, Ch

AU - Abstreiter, G.

AU - Ploog, K.

PY - 1985

Y1 - 1985

N2 - The resonant tunneling of electrons between valence band states and discrete subbands in the conduction band is studied in pnp-GaAs quantum well structures. The I(V) characteristics for direct tunneling processes are analyzed theoretically. Experimental results are obtained with pnp-triode structures with specially designed selective contacts. The k// parallel -dependence of the tunneling probability is important for doping concentrations of the order of 2 multiplied by 10**1**8 cm** minus **3.

AB - The resonant tunneling of electrons between valence band states and discrete subbands in the conduction band is studied in pnp-GaAs quantum well structures. The I(V) characteristics for direct tunneling processes are analyzed theoretically. Experimental results are obtained with pnp-triode structures with specially designed selective contacts. The k// parallel -dependence of the tunneling probability is important for doping concentrations of the order of 2 multiplied by 10**1**8 cm** minus **3.

UR - http://www.scopus.com/inward/record.url?scp=0022216769&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0022216769

SN - 0854981659

T3 - Institute of Physics Conference Series

SP - 339

EP - 344

BT - Institute of Physics Conference Series

A2 - de Cremoux, B.

ER -

RESONANT TUNNELING IN MBE-GROWN PNP-GaAs QUANTUM WELL STRUCTURES.

Abstract

Publication series

Other files and links

Fingerprint

Cite this