Resonant tunneling in doping quantum well structures

Ch Zeller; G. Abstreiter; K. Ploog

doi:10.1016/0039-6028(84)90351-0

Resonant tunneling in doping quantum well structures

Ch Zeller, G. Abstreiter, K. Ploog

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The resonant tunneling of electrons between valence band states and discrete subbands in the conduction band is studied in pnp-GaAs quantum well structures. Transitions into different electric subbands in the conduction band are observed in the derivative curves of the I-V characteristics. The concept of a tunnel triode structure is proposed which is based on resonant tunneling via electronic states of a two-dimensional system.

Original language	English
Pages (from-to)	456-459
Number of pages	4
Journal	Surface Science
Volume	142
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(84)90351-0
State	Published - 1 Jul 1984

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title = "Resonant tunneling in doping quantum well structures",

abstract = "The resonant tunneling of electrons between valence band states and discrete subbands in the conduction band is studied in pnp-GaAs quantum well structures. Transitions into different electric subbands in the conduction band are observed in the derivative curves of the I-V characteristics. The concept of a tunnel triode structure is proposed which is based on resonant tunneling via electronic states of a two-dimensional system.",

author = "Ch Zeller and G. Abstreiter and K. Ploog",

note = "Funding Information: We wish to thank A. Fischer for the expert help in sample preparation. The work has been supported by the Deutsche Forschungsgemeinschaft via SFB 128 and by the Bundesministerium fur Forschung und Technologie of the Federal Republic of Germany.",

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AU - Abstreiter, G.

AU - Ploog, K.

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PY - 1984/7/1

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N2 - The resonant tunneling of electrons between valence band states and discrete subbands in the conduction band is studied in pnp-GaAs quantum well structures. Transitions into different electric subbands in the conduction band are observed in the derivative curves of the I-V characteristics. The concept of a tunnel triode structure is proposed which is based on resonant tunneling via electronic states of a two-dimensional system.

AB - The resonant tunneling of electrons between valence band states and discrete subbands in the conduction band is studied in pnp-GaAs quantum well structures. Transitions into different electric subbands in the conduction band are observed in the derivative curves of the I-V characteristics. The concept of a tunnel triode structure is proposed which is based on resonant tunneling via electronic states of a two-dimensional system.

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U2 - 10.1016/0039-6028(84)90351-0

DO - 10.1016/0039-6028(84)90351-0

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VL - 142

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JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Resonant tunneling in doping quantum well structures

Abstract

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