Resonant tunneling between parallel 1D quantum wires and adjoining 2D electron reservoirs

F. Ertl; S. Roth; D. Schuh; M. Bichler; G. Abstreiter

doi:10.1016/j.physe.2003.12.004

Resonant tunneling between parallel 1D quantum wires and adjoining 2D electron reservoirs

F. Ertl
, S. Roth
, D. Schuh
, M. Bichler
, G. Abstreiter

Natural Sciences

Walter Schottky Institut

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

We report on non-equilibrium transport measurements as a function of Fermi-energy of two-dimensional (2D) to one-dimensional (1D) resonant tunneling transistors. The investigated samples are fabricated by means of the cleaved-edge overgrowth method to provide atomically precise parallel 1D quantum wires adjacent to 2D electron reservoirs. We find a pronounced negative differential resistance, which is identified as resonant tunneling of 2D electrons through the ground state of the (coupled) quantum wire(s). Further signatures are related to the first-excited (coupled) quantum wire(s) state. The data are qualitatively consistent with a proposed model, which considers the specific structure of the given samples and low-dimensional tunneling with energy and momentum conservation.

Original language	English
Pages (from-to)	292-295
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	22
Issue number	1-3
DOIs	https://doi.org/10.1016/j.physe.2003.12.004
State	Published - Apr 2004
Event	15th International Conference on ELectronic Propreties - Nara, Japan Duration: 14 Jul 2003 → 18 Jul 2003

Keywords

Cleaved-edge overgrowth
Electronic transport
Resonant tunneling
Tunneling transistor

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10.1016/j.physe.2003.12.004

Cite this

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title = "Resonant tunneling between parallel 1D quantum wires and adjoining 2D electron reservoirs",

abstract = "We report on non-equilibrium transport measurements as a function of Fermi-energy of two-dimensional (2D) to one-dimensional (1D) resonant tunneling transistors. The investigated samples are fabricated by means of the cleaved-edge overgrowth method to provide atomically precise parallel 1D quantum wires adjacent to 2D electron reservoirs. We find a pronounced negative differential resistance, which is identified as resonant tunneling of 2D electrons through the ground state of the (coupled) quantum wire(s). Further signatures are related to the first-excited (coupled) quantum wire(s) state. The data are qualitatively consistent with a proposed model, which considers the specific structure of the given samples and low-dimensional tunneling with energy and momentum conservation.",

keywords = "Cleaved-edge overgrowth, Electronic transport, Resonant tunneling, Tunneling transistor",

author = "F. Ertl and S. Roth and D. Schuh and M. Bichler and G. Abstreiter",

year = "2004",

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doi = "10.1016/j.physe.2003.12.004",

language = "English",

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pages = "292--295",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

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number = "1-3",

note = "15th International Conference on ELectronic Propreties ; Conference date: 14-07-2003 Through 18-07-2003",

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TY - JOUR

T1 - Resonant tunneling between parallel 1D quantum wires and adjoining 2D electron reservoirs

AU - Ertl, F.

AU - Roth, S.

AU - Schuh, D.

AU - Bichler, M.

AU - Abstreiter, G.

PY - 2004/4

Y1 - 2004/4

N2 - We report on non-equilibrium transport measurements as a function of Fermi-energy of two-dimensional (2D) to one-dimensional (1D) resonant tunneling transistors. The investigated samples are fabricated by means of the cleaved-edge overgrowth method to provide atomically precise parallel 1D quantum wires adjacent to 2D electron reservoirs. We find a pronounced negative differential resistance, which is identified as resonant tunneling of 2D electrons through the ground state of the (coupled) quantum wire(s). Further signatures are related to the first-excited (coupled) quantum wire(s) state. The data are qualitatively consistent with a proposed model, which considers the specific structure of the given samples and low-dimensional tunneling with energy and momentum conservation.

AB - We report on non-equilibrium transport measurements as a function of Fermi-energy of two-dimensional (2D) to one-dimensional (1D) resonant tunneling transistors. The investigated samples are fabricated by means of the cleaved-edge overgrowth method to provide atomically precise parallel 1D quantum wires adjacent to 2D electron reservoirs. We find a pronounced negative differential resistance, which is identified as resonant tunneling of 2D electrons through the ground state of the (coupled) quantum wire(s). Further signatures are related to the first-excited (coupled) quantum wire(s) state. The data are qualitatively consistent with a proposed model, which considers the specific structure of the given samples and low-dimensional tunneling with energy and momentum conservation.

KW - Cleaved-edge overgrowth

KW - Electronic transport

KW - Resonant tunneling

KW - Tunneling transistor

UR - https://www.scopus.com/pages/publications/1842785387

U2 - 10.1016/j.physe.2003.12.004

DO - 10.1016/j.physe.2003.12.004

M3 - Conference article

AN - SCOPUS:1842785387

SN - 1386-9477

VL - 22

SP - 292

EP - 295

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-3

T2 - 15th International Conference on ELectronic Propreties

Y2 - 14 July 2003 through 18 July 2003

ER -

Resonant tunneling between parallel 1D quantum wires and adjoining 2D electron reservoirs

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Keywords

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