Resonant magnetotunneling in GaAs-AlAs-GaAs heterostructures

J. Finley, R. Teissier

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We report the observation of resonant magnetotunneling between states of different effective mass derived from zone center ((Formula presented)) and zone boundary ((Formula presented)) points of the Brillouin zone in single-barrier GaAs/AlAs/GaAs (Formula presented) heterostructures. Resonances arise in the conductance-bias characteristics for both Landau level index conserving ((Formula presented)) and nonconserving transfer ((Formula presented)). For (Formula presented) resonances, structure with a splitting proportional to the difference in the cyclotron frequencies ((Formula presented)) is observed, while for (Formula presented) transitions a smaller splitting corresponding to (Formula presented) is reflected. Analysis of these features enables the transverse ((Formula presented)) effective mass in AlAs to be determined. Clear evidence for (Formula presented) conserving and nonconserving transfer in the elastic (Formula presented) transfer process is reported.

Original languageEnglish
Pages (from-to)R5251-R5254
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume54
Issue number8
DOIs
StatePublished - 1996
Externally publishedYes

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