Abstract
Resonant inelastic light scattering is used to probe plasmon excitations in shallow etched GaAs AlGaAs quantum wires. A semitransparent Schottky gate on top of the structure allows a strong variation of the carrier density in the system. The wavevector dispersion of the collective excitation spectrum is studied from the regime of confined wires to a charge density modulated system.
Original language | English |
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Pages (from-to) | 569-574 |
Number of pages | 6 |
Journal | Solid State Communications |
Volume | 93 |
Issue number | 7 |
DOIs | |
State | Published - Feb 1995 |
Keywords
- A. nanostructures
- D. electron-electron interaction
- D. optical properties
- D. quantum localization
- E. inelastic light scattering