Abstract
In this paper we explain the resonant enhancement of the current gain at frequencies beyond the transit frequency and we describe the experimental verification of the resonance phase effect. A resonance phase transistor (RPT) is an HBT where transit time effects in the base region and the collector junction are utilized to achieve amplification beyond the transit frequency f T. In this work a relatively thick graded SiGe base layer of 120nm is used to facilitate accurate experimental characterization. In the setup analyzed, a current gain of 6.5 dB is measured at 40 GHz. The RPT is a potentially instable device with a small region of stability well suited for oscillator applications. The breakdown voltage (20V in the considered case) is much higher as that of an HBT. With the RPT cascode circuit we propose a circuit and an integration topology that allows the realization of stable RPT amplifiers.
| Original language | English |
|---|---|
| Article number | 10.1 |
| Pages (from-to) | 155-162 |
| Number of pages | 8 |
| Journal | Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting |
| State | Published - 2005 |
| Event | 2005 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM - Santa Barbara, CA, United States Duration: 9 Oct 2005 → 11 Oct 2005 |
Keywords
- Cascode Circuit
- Heterojunction Bipolar Transistors
- Millimeter Wave Transistors
- Resonance Phase Transistor
- Silicon Germanium
- Transit Frequency