Resonance enhancement of Raman scattering by electron-gas excitations of n-GaAs

A. Pinczuk; G. Abstreiter; R. Trommer; M. Cardona

doi:10.1016/0038-1098(79)91181-5

Resonance enhancement of Raman scattering by electron-gas excitations of n-GaAs

A. Pinczuk, G. Abstreiter, R. Trommer, M. Cardona

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Abstract

Large resonance enhancements in the inelastic light scattering intensities involving free carriers have been measured at the E₀ + Δ₀ energy gap of n-GaAs. Results for spin-flip single particle excitations are well described as unscreened intraband scattering involving the Γ₇ valence band as intermediate state. The resonance of the longitudinal plasmon-phonon coupled modes indicates the contribution of other so far not fully identified processes.

Original language	English
Pages (from-to)	429-432
Number of pages	4
Journal	Solid State Communications
Volume	30
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(79)91181-5
State	Published - May 1979
Externally published	Yes

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title = "Resonance enhancement of Raman scattering by electron-gas excitations of n-GaAs",

abstract = "Large resonance enhancements in the inelastic light scattering intensities involving free carriers have been measured at the E0 + Δ0 energy gap of n-GaAs. Results for spin-flip single particle excitations are well described as unscreened intraband scattering involving the Γ7 valence band as intermediate state. The resonance of the longitudinal plasmon-phonon coupled modes indicates the contribution of other so far not fully identified processes.",

author = "A. Pinczuk and G. Abstreiter and R. Trommer and M. Cardona",

year = "1979",

month = may,

doi = "10.1016/0038-1098(79)91181-5",

language = "English",

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journal = "Solid State Communications",

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T1 - Resonance enhancement of Raman scattering by electron-gas excitations of n-GaAs

AU - Pinczuk, A.

AU - Abstreiter, G.

AU - Trommer, R.

AU - Cardona, M.

PY - 1979/5

Y1 - 1979/5

N2 - Large resonance enhancements in the inelastic light scattering intensities involving free carriers have been measured at the E0 + Δ0 energy gap of n-GaAs. Results for spin-flip single particle excitations are well described as unscreened intraband scattering involving the Γ7 valence band as intermediate state. The resonance of the longitudinal plasmon-phonon coupled modes indicates the contribution of other so far not fully identified processes.

AB - Large resonance enhancements in the inelastic light scattering intensities involving free carriers have been measured at the E0 + Δ0 energy gap of n-GaAs. Results for spin-flip single particle excitations are well described as unscreened intraband scattering involving the Γ7 valence band as intermediate state. The resonance of the longitudinal plasmon-phonon coupled modes indicates the contribution of other so far not fully identified processes.

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U2 - 10.1016/0038-1098(79)91181-5

DO - 10.1016/0038-1098(79)91181-5

M3 - Article

AN - SCOPUS:0018469479

SN - 0038-1098

VL - 30

SP - 429

EP - 432

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

Resonance enhancement of Raman scattering by electron-gas excitations of n-GaAs

Abstract

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