Residual strain effects on the two-dimensional electron gas concentration of AIGaN/GaN heterostructures

G. Martínez-Criado; A. Cros; A. Cantarero; O. Ambacher; C. R. Miskys; R. Dimitrov; M. Stutzmann; J. Smart; J. R. Shealy

doi:10.1063/1.1408268

Residual strain effects on the two-dimensional electron gas concentration of AIGaN/GaN heterostructures

G. Martínez-Criado, A. Cros, A. Cantarero, O. Ambacher, C. R. Miskys, R. Dimitrov, M. Stutzmann, J. Smart, J. R. Shealy

TUM Emeriti of Excellence

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16 Scopus citations

Abstract

Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E₂ Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentration (n_s). Possible causes for the discrepancies between the calculated and experimentally determined sheet carrier densities are briefly discussed.

Original language	English
Pages (from-to)	4735-4740
Number of pages	6
Journal	Journal of Applied Physics
Volume	90
Issue number	9
DOIs	https://doi.org/10.1063/1.1408268
State	Published - 1 Nov 2001

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title = "Residual strain effects on the two-dimensional electron gas concentration of AIGaN/GaN heterostructures",

abstract = "Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentration (ns). Possible causes for the discrepancies between the calculated and experimentally determined sheet carrier densities are briefly discussed.",

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T1 - Residual strain effects on the two-dimensional electron gas concentration of AIGaN/GaN heterostructures

AU - Martínez-Criado, G.

AU - Cros, A.

AU - Cantarero, A.

AU - Ambacher, O.

AU - Miskys, C. R.

AU - Dimitrov, R.

AU - Stutzmann, M.

AU - Smart, J.

AU - Shealy, J. R.

PY - 2001/11/1

Y1 - 2001/11/1

N2 - Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentration (ns). Possible causes for the discrepancies between the calculated and experimentally determined sheet carrier densities are briefly discussed.

AB - Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentration (ns). Possible causes for the discrepancies between the calculated and experimentally determined sheet carrier densities are briefly discussed.

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Residual strain effects on the two-dimensional electron gas concentration of AIGaN/GaN heterostructures

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