Residual-free reactive ion etching of gold layers

Gerhard Franz; Wolfhard Oberhausen; Ralf Meyer; Markus Christian Amann

doi:10.1063/1.5037886

Residual-free reactive ion etching of gold layers

Gerhard Franz, Wolfhard Oberhausen, Ralf Meyer, Markus Christian Amann

Chair of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Metal contacts on semiconductors devices are normally defined by lift-off process, because no well-defined etch processes exist for some rare metals. In this work, an RIE process for gold contacts is introduced which requires a high-density plasma, generated by electron cyclotron resonance. The proof is given by the residual-free etching without fence-generation and micromasking in the vicinity of the mask.

Original language	English
Article number	075026
Journal	AIP Advances
Volume	8
Issue number	7
DOIs	https://doi.org/10.1063/1.5037886
State	Published - 1 Jul 2018

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@article{a03bdb9afbad42c3adc29e0c11c70e69,

title = "Residual-free reactive ion etching of gold layers",

abstract = "Metal contacts on semiconductors devices are normally defined by lift-off process, because no well-defined etch processes exist for some rare metals. In this work, an RIE process for gold contacts is introduced which requires a high-density plasma, generated by electron cyclotron resonance. The proof is given by the residual-free etching without fence-generation and micromasking in the vicinity of the mask.",

author = "Gerhard Franz and Wolfhard Oberhausen and Ralf Meyer and Amann, {Markus Christian}",

note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",

year = "2018",

month = jul,

day = "1",

doi = "10.1063/1.5037886",

language = "English",

volume = "8",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Residual-free reactive ion etching of gold layers

AU - Franz, Gerhard

AU - Oberhausen, Wolfhard

AU - Meyer, Ralf

AU - Amann, Markus Christian

PY - 2018/7/1

Y1 - 2018/7/1

N2 - Metal contacts on semiconductors devices are normally defined by lift-off process, because no well-defined etch processes exist for some rare metals. In this work, an RIE process for gold contacts is introduced which requires a high-density plasma, generated by electron cyclotron resonance. The proof is given by the residual-free etching without fence-generation and micromasking in the vicinity of the mask.

AB - Metal contacts on semiconductors devices are normally defined by lift-off process, because no well-defined etch processes exist for some rare metals. In this work, an RIE process for gold contacts is introduced which requires a high-density plasma, generated by electron cyclotron resonance. The proof is given by the residual-free etching without fence-generation and micromasking in the vicinity of the mask.

UR - http://www.scopus.com/inward/record.url?scp=85050762392&partnerID=8YFLogxK

U2 - 10.1063/1.5037886

DO - 10.1063/1.5037886

M3 - Article

AN - SCOPUS:85050762392

SN - 2158-3226

VL - 8

JO - AIP Advances

JF - AIP Advances

IS - 7

M1 - 075026

ER -

Residual-free reactive ion etching of gold layers

Abstract

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