Residual-free reactive ion etching of gold layers

Gerhard Franz, Wolfhard Oberhausen, Ralf Meyer, Markus Christian Amann

Research output: Contribution to journalArticlepeer-review


Metal contacts on semiconductors devices are normally defined by lift-off process, because no well-defined etch processes exist for some rare metals. In this work, an RIE process for gold contacts is introduced which requires a high-density plasma, generated by electron cyclotron resonance. The proof is given by the residual-free etching without fence-generation and micromasking in the vicinity of the mask.

Original languageEnglish
Article number075026
JournalAIP Advances
Issue number7
StatePublished - 1 Jul 2018


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