Reprint of: GaN nanowires on diamond

Martin Hetzl; Fabian Schuster; Andrea Winnerl; Saskia Weiszer; Martin Stutzmann

doi:10.1016/j.mssp.2016.09.026

Reprint of: GaN nanowires on diamond

Martin Hetzl, Fabian Schuster, Andrea Winnerl, Saskia Weiszer, Martin Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The current research of GaN nanowires on diamond substrates is reviewed and extended by recent results. Both the self-assembled and the selective area growth mechanisms using plasma-assisted molecular beam epitaxy are summarized. Structural and optical properties of as-grown nanowires as well as doping-related issues are discussed and compared to nanowires on silicon substrate. The electronic characteristics of p-diamond/n-GaN nanowire heterojunctions are addressed theoretically by band structure simulations and experimentally by transport measurements. Finally, electroluminescence of a fabricated prototype nanoLED device is demonstrated.

Original language	English
Pages (from-to)	32-45
Number of pages	14
Journal	Materials Science in Semiconductor Processing
Volume	55
DOIs	https://doi.org/10.1016/j.mssp.2016.09.026
State	Published - 15 Nov 2016

Keywords

Diamond
Doping
Electroluminescence
GaN
Heteroepitaxy
Nanowires
Photoluminescence

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10.1016/j.mssp.2016.09.026

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title = "Reprint of: GaN nanowires on diamond",

abstract = "The current research of GaN nanowires on diamond substrates is reviewed and extended by recent results. Both the self-assembled and the selective area growth mechanisms using plasma-assisted molecular beam epitaxy are summarized. Structural and optical properties of as-grown nanowires as well as doping-related issues are discussed and compared to nanowires on silicon substrate. The electronic characteristics of p-diamond/n-GaN nanowire heterojunctions are addressed theoretically by band structure simulations and experimentally by transport measurements. Finally, electroluminescence of a fabricated prototype nanoLED device is demonstrated.",

keywords = "Diamond, Doping, Electroluminescence, GaN, Heteroepitaxy, Nanowires, Photoluminescence",

author = "Martin Hetzl and Fabian Schuster and Andrea Winnerl and Saskia Weiszer and Martin Stutzmann",

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AU - Hetzl, Martin

AU - Schuster, Fabian

AU - Winnerl, Andrea

AU - Weiszer, Saskia

AU - Stutzmann, Martin

PY - 2016/11/15

Y1 - 2016/11/15

N2 - The current research of GaN nanowires on diamond substrates is reviewed and extended by recent results. Both the self-assembled and the selective area growth mechanisms using plasma-assisted molecular beam epitaxy are summarized. Structural and optical properties of as-grown nanowires as well as doping-related issues are discussed and compared to nanowires on silicon substrate. The electronic characteristics of p-diamond/n-GaN nanowire heterojunctions are addressed theoretically by band structure simulations and experimentally by transport measurements. Finally, electroluminescence of a fabricated prototype nanoLED device is demonstrated.

AB - The current research of GaN nanowires on diamond substrates is reviewed and extended by recent results. Both the self-assembled and the selective area growth mechanisms using plasma-assisted molecular beam epitaxy are summarized. Structural and optical properties of as-grown nanowires as well as doping-related issues are discussed and compared to nanowires on silicon substrate. The electronic characteristics of p-diamond/n-GaN nanowire heterojunctions are addressed theoretically by band structure simulations and experimentally by transport measurements. Finally, electroluminescence of a fabricated prototype nanoLED device is demonstrated.

KW - Diamond

KW - Doping

KW - Electroluminescence

KW - GaN

KW - Heteroepitaxy

KW - Nanowires

KW - Photoluminescence

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DO - 10.1016/j.mssp.2016.09.026

M3 - Article

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SN - 1369-8001

VL - 55

SP - 32

EP - 45

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -

Reprint of: GaN nanowires on diamond

Abstract

Keywords

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