Abstract
The photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiGe based quantum well (QW) structures due to their built-in asymmetry. We report on the removal of spin degeneracy in the k-space of SiGe nanostructures. This is concluded from the observations of the circular photogalvanic effect induced by infrared radiation in asymmetric p-type QWs. We discuss possible mechanisms that give rise to spin-splitting of the electronic subband states.
Original language | English |
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Pages (from-to) | 169-171 |
Number of pages | 3 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5023 |
DOIs | |
State | Published - 2003 |
Externally published | Yes |
Event | 10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation Duration: 17 Jun 2002 → 21 Jun 2002 |
Keywords
- Built-in asymmetry
- Photogalvanic effects
- Spin-splitting