Removal of spin degeneracy in SiGe based nanostructures

S. D. Ganichev, U. Rössler, W. Prettl, E. L. Ivchenko, V. V. Bel'kov, R. Neumann, K. Brunner, G. Abstreiter

Research output: Contribution to journalConference articlepeer-review

Abstract

The photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiGe based quantum well (QW) structures due to their built-in asymmetry. We report on the removal of spin degeneracy in the k-space of SiGe nanostructures. This is concluded from the observations of the circular photogalvanic effect induced by infrared radiation in asymmetric p-type QWs. We discuss possible mechanisms that give rise to spin-splitting of the electronic subband states.

Original languageEnglish
Pages (from-to)169-171
Number of pages3
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5023
DOIs
StatePublished - 2003
Externally publishedYes
Event10th International Symposium on Nanostructures: Physics and Technology - St. Petersburg, Russian Federation
Duration: 17 Jun 200221 Jun 2002

Keywords

  • Built-in asymmetry
  • Photogalvanic effects
  • Spin-splitting

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