Remote polar phonon scattering in silicon inversion layers

K. Hess, P. Vogl

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

A new scattering mechanism for free carriers in inversion layers is proposed. It is shown that polar optical phonons of the insulator couple effectively to the inversion layer electrons in the adjacent semiconductor. For the Si-SiO2 interface this scattering by remote polar phonons influences substantially the field dependent mobility of the silicon inversion layer carriers.

Original languageEnglish
Pages (from-to)797-799
Number of pages3
JournalSolid State Communications
Volume30
Issue number12
DOIs
StatePublished - Jun 1979
Externally publishedYes

Fingerprint

Dive into the research topics of 'Remote polar phonon scattering in silicon inversion layers'. Together they form a unique fingerprint.

Cite this