Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

V. T. Dolgopolov; E. V. Deviatov; A. A. Shashkin; U. Wieser; U. Kunze; G. Abstreiter; K. Brunner

doi:10.1016/j.spmi.2004.02.003

Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

V. T. Dolgopolov
, E. V. Deviatov
, A. A. Shashkin
, U. Wieser
, U. Kunze
, G. Abstreiter
, K. Brunner

Natural Sciences

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.

Original language	English
Pages (from-to)	271-278
Number of pages	8
Journal	Superlattices and Microstructures
Volume	33
Issue number	5-6
DOIs	https://doi.org/10.1016/j.spmi.2004.02.003
State	Published - 2003

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10.1016/j.spmi.2004.02.003

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title = "Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well",

abstract = "The small, about 30\% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.",

author = "Dolgopolov, \{V. T.\} and Deviatov, \{E. V.\} and Shashkin, \{A. A.\} and U. Wieser and U. Kunze and G. Abstreiter and K. Brunner",

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T1 - Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

AU - Dolgopolov, V. T.

AU - Deviatov, E. V.

AU - Shashkin, A. A.

AU - Wieser, U.

AU - Kunze, U.

AU - Abstreiter, G.

AU - Brunner, K.

PY - 2003

Y1 - 2003

N2 - The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.

AB - The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.

UR - https://www.scopus.com/pages/publications/2542420809

U2 - 10.1016/j.spmi.2004.02.003

DO - 10.1016/j.spmi.2004.02.003

M3 - Article

AN - SCOPUS:2542420809

SN - 0749-6036

VL - 33

SP - 271

EP - 278

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5-6

ER -

Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

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