TY - GEN
T1 - Reliable piezoelectric FEM-simulations of MEMS microphones
T2 - 9th IEEE Sensors Conference 2010, SENSORS 2010
AU - Reutter, T.
AU - Schrag, G.
PY - 2010
Y1 - 2010
N2 - We derived a 3D FEM-simulation model for a piezoelectric MEMS-microphone, which includes - in contrast to commonly used models - intrinsic stress effects. The stress values included in the model are determined by measurements of cantilever test structures. The challenging task in the simulation is to combine a piezoelectric analysis with intrinsic stress in a harmonic response analysis, as to this, several restrictions exist in commercially available tools. The arising difficulties could be overcome by employing a coupled thermo-electro-mechanical simulation in order to get consistent static and harmonic response results. In that way, we were able to demonstrate successfully that intrinsic stress dramatically reduces the microphone sensitivity and necessarily has to be integrated in the FE-model for reliable and predictive device simulations. Additionally, the derived model is fully 3D and, thus, allows for design studies and optimization as well as for the evaluation of new design concepts since also non-axisymmetric geometries can be assembled.
AB - We derived a 3D FEM-simulation model for a piezoelectric MEMS-microphone, which includes - in contrast to commonly used models - intrinsic stress effects. The stress values included in the model are determined by measurements of cantilever test structures. The challenging task in the simulation is to combine a piezoelectric analysis with intrinsic stress in a harmonic response analysis, as to this, several restrictions exist in commercially available tools. The arising difficulties could be overcome by employing a coupled thermo-electro-mechanical simulation in order to get consistent static and harmonic response results. In that way, we were able to demonstrate successfully that intrinsic stress dramatically reduces the microphone sensitivity and necessarily has to be integrated in the FE-model for reliable and predictive device simulations. Additionally, the derived model is fully 3D and, thus, allows for design studies and optimization as well as for the evaluation of new design concepts since also non-axisymmetric geometries can be assembled.
UR - https://www.scopus.com/pages/publications/79951912428
U2 - 10.1109/ICSENS.2010.5690498
DO - 10.1109/ICSENS.2010.5690498
M3 - Conference contribution
AN - SCOPUS:79951912428
SN - 9781424481682
T3 - Proceedings of IEEE Sensors
SP - 193
EP - 196
BT - IEEE Sensors 2010 Conference, SENSORS 2010
Y2 - 1 November 2010 through 4 November 2010
ER -