TY - GEN
T1 - Reliable Hyperdimensional Reasoning on Unreliable Emerging Technologies
AU - Barkam, Hamza Errahmouni
AU - Yun, Sanggeon
AU - Chen, Hanning
AU - Gensler, Paul
AU - Mema, Albi
AU - Ding, Andrew
AU - Michelogiannakis, George
AU - Amrouch, Hussam
AU - Imani, Mohsen
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - While Graph Neural Networks (GNNs) have demonstrated remarkable achievements in knowledge graph reasoning, their computational efficiency on conventional computing platforms is impeded by the memory wall problem. To overcome these challenges, we introduce an innovative algorithm-hardware solution that harnesses the potential of hyperdimensional computing (HDC) for robust and memory-centric computation on computing in-memory (CiM) platforms. Departing from traditional graph neural networks, the proposed HDC reasoning model employs a symbolic approach to effectively encode graph entities and their relationships as high-dimensional neural activity. Complementing this approach is a customized Computing-in-Memory (CiM) architecture based on advanced Ferroelectric Field-Effect Transistor (FeFET) technology, which incorporates a precise characterization of non-idealities. This modeling enables the generation of an HDC-tailored model that faithfully represents the hardware architecture. Despite the non-idealities inherent in emerging CiM technologies, our platform demonstrates performance on par with traditional von Neumann architectures for substantial combinations of FeFET device parameters. Our solution overcomes FeFET CiM the increased non-idealities from down-scaled 3nm, operating effectively under all possible configurations when 50 graph edges are considered. Scenarios with less than 4-bit precision per FeFET device cannot handle graphs with more than 200 edges, whereas the 4-bit case can achieve a 90.3% graph reconstruction rate on the worst-case scenario of 80% of noise.
AB - While Graph Neural Networks (GNNs) have demonstrated remarkable achievements in knowledge graph reasoning, their computational efficiency on conventional computing platforms is impeded by the memory wall problem. To overcome these challenges, we introduce an innovative algorithm-hardware solution that harnesses the potential of hyperdimensional computing (HDC) for robust and memory-centric computation on computing in-memory (CiM) platforms. Departing from traditional graph neural networks, the proposed HDC reasoning model employs a symbolic approach to effectively encode graph entities and their relationships as high-dimensional neural activity. Complementing this approach is a customized Computing-in-Memory (CiM) architecture based on advanced Ferroelectric Field-Effect Transistor (FeFET) technology, which incorporates a precise characterization of non-idealities. This modeling enables the generation of an HDC-tailored model that faithfully represents the hardware architecture. Despite the non-idealities inherent in emerging CiM technologies, our platform demonstrates performance on par with traditional von Neumann architectures for substantial combinations of FeFET device parameters. Our solution overcomes FeFET CiM the increased non-idealities from down-scaled 3nm, operating effectively under all possible configurations when 50 graph edges are considered. Scenarios with less than 4-bit precision per FeFET device cannot handle graphs with more than 200 edges, whereas the 4-bit case can achieve a 90.3% graph reconstruction rate on the worst-case scenario of 80% of noise.
UR - http://www.scopus.com/inward/record.url?scp=85179841384&partnerID=8YFLogxK
U2 - 10.1109/ICCAD57390.2023.10323935
DO - 10.1109/ICCAD57390.2023.10323935
M3 - Conference contribution
AN - SCOPUS:85179841384
T3 - IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
BT - 2023 42nd IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 42nd IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2023
Y2 - 28 October 2023 through 2 November 2023
ER -