Reliability analysis and modeling of Power MOSFETs in the 42-V-PowerNet

Alberto Castellazzi, York C. Gerstenmaier, Rainer Kraus, Gerhard K.M. Wachutka

Research output: Contribution to journalArticlepeer-review

77 Scopus citations


This paper analyzes the operation of PowerMOSFETs in the 42-V-PowerNet and shows that very stressful conditions are encountered, which can lead to severe reliability problems. To enable thorough investigations by circuit simulations an accurate physics-based compact model of the devices is proposed: it includes all important electrothermal effects relevant to the description of the observed failure mechanisms. By means of an advanced thermal-modeling approach, multichip assemblies can be accurately described, including mutual heating effects between neighboring devices. Some properly chosen examples demonstrate the validity of the model and its usefulness for reliability investigations.

Original languageEnglish
Pages (from-to)603-612
Number of pages10
JournalIEEE Transactions on Power Electronics
Issue number3
StatePublished - May 2006


  • Electrothermal effects
  • Modeling
  • Power metal-oxide semiconductor field-effect transistors (MOSFETs)
  • Reliability


Dive into the research topics of 'Reliability analysis and modeling of Power MOSFETs in the 42-V-PowerNet'. Together they form a unique fingerprint.

Cite this