Relevant scattering processes, band gap renormalization and moss-burstein shift in modulation doped narrow GaAs/AlGaAs multiple quantum wells

U. Bockelmann; P. Hiergeist; G. Abstreiter; G. Weimann; W. Schlapp

doi:10.1016/0039-6028(90)90916-V

Relevant scattering processes, band gap renormalization and moss-burstein shift in modulation doped narrow GaAs/AlGaAs multiple quantum wells

U. Bockelmann, P. Hiergeist, G. Abstreiter, G. Weimann, W. Schlapp

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A set of GaAs/AlGaAs multiple quantum wells with systematic variations of the well width L_z and the electron density n_s is investigated by magnetotransport and luminescence excitation spectroscopy. The single-particle relaxation time τ_s and the transport scattering time τ_t are extracted from Shubnikov-de Haas oscillations and zero-field mobility, respectively. The influence of different scattering processes is determined as a function of L_z and n_s by comparing both τ_s and τ_t with calculations of interface roughness, remote impurity and allow disorder scattering of the 2DEG. Using photoluminescence and photoluminescence excitation spectroscopy the effect of band gap renormalization as well as the Moss-Burstein shift of the absorption edge are studied for the same set of samples.

Original language	English
Pages (from-to)	398-401
Number of pages	4
Journal	Surface Science
Volume	229
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(90)90916-V
State	Published - 2 Apr 1990

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title = "Relevant scattering processes, band gap renormalization and moss-burstein shift in modulation doped narrow GaAs/AlGaAs multiple quantum wells",

abstract = "A set of GaAs/AlGaAs multiple quantum wells with systematic variations of the well width Lz and the electron density ns is investigated by magnetotransport and luminescence excitation spectroscopy. The single-particle relaxation time τs and the transport scattering time τt are extracted from Shubnikov-de Haas oscillations and zero-field mobility, respectively. The influence of different scattering processes is determined as a function of Lz and ns by comparing both τs and τt with calculations of interface roughness, remote impurity and allow disorder scattering of the 2DEG. Using photoluminescence and photoluminescence excitation spectroscopy the effect of band gap renormalization as well as the Moss-Burstein shift of the absorption edge are studied for the same set of samples.",

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T1 - Relevant scattering processes, band gap renormalization and moss-burstein shift in modulation doped narrow GaAs/AlGaAs multiple quantum wells

AU - Bockelmann, U.

AU - Hiergeist, P.

AU - Abstreiter, G.

AU - Weimann, G.

AU - Schlapp, W.

PY - 1990/4/2

Y1 - 1990/4/2

N2 - A set of GaAs/AlGaAs multiple quantum wells with systematic variations of the well width Lz and the electron density ns is investigated by magnetotransport and luminescence excitation spectroscopy. The single-particle relaxation time τs and the transport scattering time τt are extracted from Shubnikov-de Haas oscillations and zero-field mobility, respectively. The influence of different scattering processes is determined as a function of Lz and ns by comparing both τs and τt with calculations of interface roughness, remote impurity and allow disorder scattering of the 2DEG. Using photoluminescence and photoluminescence excitation spectroscopy the effect of band gap renormalization as well as the Moss-Burstein shift of the absorption edge are studied for the same set of samples.

AB - A set of GaAs/AlGaAs multiple quantum wells with systematic variations of the well width Lz and the electron density ns is investigated by magnetotransport and luminescence excitation spectroscopy. The single-particle relaxation time τs and the transport scattering time τt are extracted from Shubnikov-de Haas oscillations and zero-field mobility, respectively. The influence of different scattering processes is determined as a function of Lz and ns by comparing both τs and τt with calculations of interface roughness, remote impurity and allow disorder scattering of the 2DEG. Using photoluminescence and photoluminescence excitation spectroscopy the effect of band gap renormalization as well as the Moss-Burstein shift of the absorption edge are studied for the same set of samples.

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Relevant scattering processes, band gap renormalization and moss-burstein shift in modulation doped narrow GaAs/AlGaAs multiple quantum wells

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