@inproceedings{6d5d5388609f45ae950a3030ca575992,
title = "Refined analytical model of combined thermionic emission and drift-diffusion current flow through schottky structure",
abstract = "A refined approach leading to an enhanced analytical model of current transport through a Schottky structure at high forward bias voltage is presented The derived analytical equations represent a reasonable compromise between the physical rigorosity and practical applicability of two real metal-semiconductor interfaces including the quasi-neutral layer in one compact model.",
author = "J. Racko and D. Donoval and G. Wachutka",
note = "Publisher Copyright: {\textcopyright} 1996 Editions Frontieres.; 26th European Solid State Device Research Conference, ESSDERC 1996 ; Conference date: 09-09-1996 Through 11-09-1996",
year = "1996",
language = "English",
isbn = "9782863321966",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "275--278",
editor = "Massimo Rudan and Giorgio Baccarani",
booktitle = "ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference",
}