Abstract
The influence of facet passivation on the noise behaviour of InGaAsP/InP double-heterostructures used for 1.55 μm laser diodes is investigated. The facet treatment with sodium sulphide resulted in a reduction of the low-frequency noise by about 30 dB (at 1 kHz). This noise reduction can clearly be attributed to the decrease of the surface state density by facet passivation. Moreover, our measurements indicate that the strong 1/f carrier noise in InGaAsP/InP semiconductor laser diodes is essentially caused by surface recombination.
Original language | English |
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Pages (from-to) | 778-780 |
Number of pages | 3 |
Journal | Semiconductor Science and Technology |
Volume | 12 |
Issue number | 7 |
DOIs | |
State | Published - Jul 1997 |
Externally published | Yes |