Reduction of 1/f carrier noise in InGaAsP/InP heterostructures by sulphur passivation of facets

R. Hakimi, M. C. Amann

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

The influence of facet passivation on the noise behaviour of InGaAsP/InP double-heterostructures used for 1.55 μm laser diodes is investigated. The facet treatment with sodium sulphide resulted in a reduction of the low-frequency noise by about 30 dB (at 1 kHz). This noise reduction can clearly be attributed to the decrease of the surface state density by facet passivation. Moreover, our measurements indicate that the strong 1/f carrier noise in InGaAsP/InP semiconductor laser diodes is essentially caused by surface recombination.

Original languageEnglish
Pages (from-to)778-780
Number of pages3
JournalSemiconductor Science and Technology
Volume12
Issue number7
DOIs
StatePublished - Jul 1997
Externally publishedYes

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