Abstract
An extended model for the calculation of αaff is presented including for the first time the carrier dynamics in the absorptive grating. It is shown that for comparable carrier lifetime in the absorptive and active regions a significant reduction of atff may be achieved by the antiphase configuration of the complex coupling coefficient.
| Original language | English |
|---|---|
| Pages (from-to) | 1367-1369 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 29 |
| Issue number | 15 |
| DOIs | |
| State | Published - Jul 1993 |
| Externally published | Yes |
Keywords
- Lasers
- Semiconductor lasers
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