TY - JOUR
T1 - Record single-mode, high-power VCSELs by inhibition of spatial hole burning
AU - Gründl, Tobias
AU - Debernardi, Pierluigi
AU - Müller, Michael
AU - Grasse, Christian
AU - Ebert, Philipp
AU - Geiger, Kathrin
AU - Ortsiefer, Markus
AU - Böhm, Gerhard
AU - Meyer, Ralf
AU - Amann, Markus Christian
PY - 2013
Y1 - 2013
N2 - In this paper, we present fixed-wavelength, vertical-cavity-surface- emitting lasers (VCSELs) based on InP with remarkable single-mode (SM) output powers. It is shown that a precise choice of the diameters of the ring geometry of the bottom GaInAs intracavity contact layer severely affects the guiding behavior of the fundamental and first-order modes inside the cavity. Experimental data, statistics, and theories will be discussed on how to overcome spatial hole burning and how to master thermal guiding and efficient current injection in order to extend SM output powers to beyond 8 mW at room temperature for VCSELs with 7 μm aperture. Coming along with side-mode suppression ratios exceeding 50 dB and continuous electrothermal wavelength tunings exceeding 8 nm, these laser devices define a new state of the art of electrically pumped InP-based short-cavity long-wavelength VCSELs at 1.55 μm emission.
AB - In this paper, we present fixed-wavelength, vertical-cavity-surface- emitting lasers (VCSELs) based on InP with remarkable single-mode (SM) output powers. It is shown that a precise choice of the diameters of the ring geometry of the bottom GaInAs intracavity contact layer severely affects the guiding behavior of the fundamental and first-order modes inside the cavity. Experimental data, statistics, and theories will be discussed on how to overcome spatial hole burning and how to master thermal guiding and efficient current injection in order to extend SM output powers to beyond 8 mW at room temperature for VCSELs with 7 μm aperture. Coming along with side-mode suppression ratios exceeding 50 dB and continuous electrothermal wavelength tunings exceeding 8 nm, these laser devices define a new state of the art of electrically pumped InP-based short-cavity long-wavelength VCSELs at 1.55 μm emission.
KW - High-power single transverse mode
KW - InP
KW - short-cavity (SC)
KW - vertical-cavity-surface-emitting laser (VCSEL)
UR - http://www.scopus.com/inward/record.url?scp=84877852891&partnerID=8YFLogxK
U2 - 10.1109/JSTQE.2013.2244572
DO - 10.1109/JSTQE.2013.2244572
M3 - Article
AN - SCOPUS:84877852891
SN - 1077-260X
VL - 19
JO - IEEE Journal on Selected Topics in Quantum Electronics
JF - IEEE Journal on Selected Topics in Quantum Electronics
IS - 4
M1 - 6425394
ER -