REALIZATION OF RC-ACTIVE-FILTERS IN TaAl-SiO2-THIN-FILM-TECHNOLOGY.

J. A. Nossek; G. Goetz

REALIZATION OF RC-ACTIVE-FILTERS IN TaAl-SiO₂-THIN-FILM-TECHNOLOGY.

J. A. Nossek
, G. Goetz

Chair of Circuit Theory and Signal Processing (2008 — 2021)

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

A fifth-degree voice-channel lowpass has been realized in TaAl-SiO//2-technology. The passive RC-network is accommodated on a 11 multiplied by 35 mm**2 glazed ceramic substrate. The behavior of the filter has been studied at various temperatures and high realtive humidity. The measured results verify the advantageous properties of the TaAl-SiO//2-technology.

Original language	English
Pages	93-98
Number of pages	6
State	Published - 1977
Event	Int Conf on Thin- and Thick-Film Technol - Augsburg, Ger Duration: 28 Sep 1977 → 30 Sep 1977

Conference

Conference	Int Conf on Thin- and Thick-Film Technol
City	Augsburg, Ger
Period	28/09/77 → 30/09/77

Cite this

@conference{b0c87e503f714f35a673454aab7e97e3,

title = "REALIZATION OF RC-ACTIVE-FILTERS IN TaAl-SiO2-THIN-FILM-TECHNOLOGY.",

abstract = "A fifth-degree voice-channel lowpass has been realized in TaAl-SiO//2-technology. The passive RC-network is accommodated on a 11 multiplied by 35 mm**2 glazed ceramic substrate. The behavior of the filter has been studied at various temperatures and high realtive humidity. The measured results verify the advantageous properties of the TaAl-SiO//2-technology.",

author = "Nossek, \{J. A.\} and G. Goetz",

year = "1977",

language = "English",

pages = "93--98",

note = "Int Conf on Thin- and Thick-Film Technol ; Conference date: 28-09-1977 Through 30-09-1977",

}

TY - CONF

T1 - REALIZATION OF RC-ACTIVE-FILTERS IN TaAl-SiO2-THIN-FILM-TECHNOLOGY.

AU - Nossek, J. A.

AU - Goetz, G.

PY - 1977

Y1 - 1977

N2 - A fifth-degree voice-channel lowpass has been realized in TaAl-SiO//2-technology. The passive RC-network is accommodated on a 11 multiplied by 35 mm**2 glazed ceramic substrate. The behavior of the filter has been studied at various temperatures and high realtive humidity. The measured results verify the advantageous properties of the TaAl-SiO//2-technology.

AB - A fifth-degree voice-channel lowpass has been realized in TaAl-SiO//2-technology. The passive RC-network is accommodated on a 11 multiplied by 35 mm**2 glazed ceramic substrate. The behavior of the filter has been studied at various temperatures and high realtive humidity. The measured results verify the advantageous properties of the TaAl-SiO//2-technology.

UR - https://www.scopus.com/pages/publications/0017705684

M3 - Paper

AN - SCOPUS:0017705684

SP - 93

EP - 98

T2 - Int Conf on Thin- and Thick-Film Technol

Y2 - 28 September 1977 through 30 September 1977

ER -

REALIZATION OF RC-ACTIVE-FILTERS IN TaAl-SiO₂-THIN-FILM-TECHNOLOGY.

Abstract

Conference

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