Realistic step flow model for orientation-dependent wet etching implemented in a modular TCAD environment

Anton Horn, Franz R. Wittmann, Gerhard K.M. Wachutka

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper we present a new simulation tool for orientation-dependent wet etching of silicon which is based on a new model proposed by Schröder. (1) What is essential is the experimentally observed result that the so called "fast etching planes" causing the characteristic shape of underetched convex etchmask corners are not really crystallographic planes. We demonstrate in basic examples that our simulation approach using this "step flow model of three dimensional structuring" can be used to obtain the detailed morphology of the etched structures, and provides the flexibility for embedding the simulator in a modular technology computer aided design (TCAD) platform which comprises all process steps encountered in microtechnology.

Original languageEnglish
Pages (from-to)315-322
Number of pages8
JournalSensors and Materials
Volume13
Issue number6
StatePublished - 2001

Keywords

  • 3D-simulation
  • Orientation-dependent wet etching

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