Abstract
We present the real-time x-ray irradiation response of charge and pH sensitive solution gate AlGaN/GaN high electron mobility transistors. The devices show stable and reproducible behavior under and following x-ray radiation, including a linear integrated response with dose into the μGy range. Titration measurements of devices in solution reveal that the linear pH response and sensitivity are not only retained under x-ray irradiation, but an irradiation response could also be measured. Since the devices are biocompatible, and can be simultaneously operated in aggressive fluids and under hard radiation, they are well-suited for both medical radiation dosimetry and biosensing applications.
| Original language | English |
|---|---|
| Article number | 092110 |
| Journal | Applied Physics Letters |
| Volume | 96 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2010 |
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