Raman spectroscopy of In(Ga)As/GaAs quantum dots

L. Chu, A. Zrenner, M. Bichler, G. Böhm, G. Abstreiter

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We report on inelastic light scattering on self-assembled In(Ga)As/GaAs quantum dots. Phonon modes are investigated in backscattering from (001) surface and (110) cleaved edge both in polarized and depolarized geometry. One relatively broad phonon signal is observed which is attributed to optical phonon modes in and around the In(Ga)As quantum dots. The Raman selection rules are similar to the bulk material. Additionally, a broad peak is observed around 50 meV under resonance conditions which is attributed to electronic interlevel transitions in the n-doped In(Ga)As quantum dots.

Original languageEnglish
Pages (from-to)3944-3946
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number24
DOIs
StatePublished - 11 Dec 2000

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