RAMAN SPECTROSCOPY AS A SURFACE SENSITIVE TECHNIQUE ON SEMICONDUCTORS.

H. J. Stolz, G. Abstreiter

Research output: Contribution to journalConference articlepeer-review

21 Scopus citations

Abstract

It is shown that the measurement of a bulk phonon property, i. e. , the Raman intensity of the resonantly excited symmetry forbidden LO-phonon via its dependence on the surface electric field, is a sensitive method to measure surface band bending in polar semiconductors. The observation of coupled phonon-plasmon modes shows the existence of flat band conditions on clean, UHV-cleaved (110)GaAs. This condition can also be reached on pinned surfaces by photoexcitation with laser power densities in excess of 500 w/cm**2. A curve fitting of the observed L** plus /L** minus -spectrum with the Lindhard-Mermin dielectric function yields information on the wavevector smearing due to strong light absorption and impurity scattering.

Original languageEnglish
Pages (from-to)380-382
Number of pages3
JournalJournal of vacuum science & technology
Volume19
Issue number3
DOIs
StatePublished - 1981
EventProc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA
Duration: 27 Jan 198129 Jan 1981

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