RAMAN SPECTROSCOPY AS A SURFACE SENSITIVE TECHNIQUE ON SEMICONDUCTORS.

H. J. Stolz; G. Abstreiter

doi:10.1116/1.571067

RAMAN SPECTROSCOPY AS A SURFACE SENSITIVE TECHNIQUE ON SEMICONDUCTORS.

H. J. Stolz, G. Abstreiter

TUM Emeriti of Excellence

Research output: Contribution to journal › Conference article › peer-review

21 Scopus citations

Abstract

It is shown that the measurement of a bulk phonon property, i. e. , the Raman intensity of the resonantly excited symmetry forbidden LO-phonon via its dependence on the surface electric field, is a sensitive method to measure surface band bending in polar semiconductors. The observation of coupled phonon-plasmon modes shows the existence of flat band conditions on clean, UHV-cleaved (110)GaAs. This condition can also be reached on pinned surfaces by photoexcitation with laser power densities in excess of 500 w/cm**2. A curve fitting of the observed L** plus /L** minus -spectrum with the Lindhard-Mermin dielectric function yields information on the wavevector smearing due to strong light absorption and impurity scattering.

Original language	English
Pages (from-to)	380-382
Number of pages	3
Journal	Journal of vacuum science & technology
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.571067
State	Published - 1981
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA Duration: 27 Jan 1981 → 29 Jan 1981

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title = "RAMAN SPECTROSCOPY AS A SURFACE SENSITIVE TECHNIQUE ON SEMICONDUCTORS.",

abstract = "It is shown that the measurement of a bulk phonon property, i. e. , the Raman intensity of the resonantly excited symmetry forbidden LO-phonon via its dependence on the surface electric field, is a sensitive method to measure surface band bending in polar semiconductors. The observation of coupled phonon-plasmon modes shows the existence of flat band conditions on clean, UHV-cleaved (110)GaAs. This condition can also be reached on pinned surfaces by photoexcitation with laser power densities in excess of 500 w/cm**2. A curve fitting of the observed L** plus /L** minus -spectrum with the Lindhard-Mermin dielectric function yields information on the wavevector smearing due to strong light absorption and impurity scattering.",

author = "Stolz, \{H. J.\} and G. Abstreiter",

year = "1981",

doi = "10.1116/1.571067",

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journal = "Journal of vacuum science \& technology",

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publisher = "American Institute of Physics",

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note = "Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th ; Conference date: 27-01-1981 Through 29-01-1981",

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T1 - RAMAN SPECTROSCOPY AS A SURFACE SENSITIVE TECHNIQUE ON SEMICONDUCTORS.

AU - Stolz, H. J.

AU - Abstreiter, G.

PY - 1981

Y1 - 1981

N2 - It is shown that the measurement of a bulk phonon property, i. e. , the Raman intensity of the resonantly excited symmetry forbidden LO-phonon via its dependence on the surface electric field, is a sensitive method to measure surface band bending in polar semiconductors. The observation of coupled phonon-plasmon modes shows the existence of flat band conditions on clean, UHV-cleaved (110)GaAs. This condition can also be reached on pinned surfaces by photoexcitation with laser power densities in excess of 500 w/cm**2. A curve fitting of the observed L** plus /L** minus -spectrum with the Lindhard-Mermin dielectric function yields information on the wavevector smearing due to strong light absorption and impurity scattering.

AB - It is shown that the measurement of a bulk phonon property, i. e. , the Raman intensity of the resonantly excited symmetry forbidden LO-phonon via its dependence on the surface electric field, is a sensitive method to measure surface band bending in polar semiconductors. The observation of coupled phonon-plasmon modes shows the existence of flat band conditions on clean, UHV-cleaved (110)GaAs. This condition can also be reached on pinned surfaces by photoexcitation with laser power densities in excess of 500 w/cm**2. A curve fitting of the observed L** plus /L** minus -spectrum with the Lindhard-Mermin dielectric function yields information on the wavevector smearing due to strong light absorption and impurity scattering.

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DO - 10.1116/1.571067

M3 - Conference article

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SN - 0022-5355

VL - 19

SP - 380

EP - 382

JO - Journal of vacuum science & technology

JF - Journal of vacuum science & technology

IS - 3

T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th

Y2 - 27 January 1981 through 29 January 1981

ER -

RAMAN SPECTROSCOPY AS A SURFACE SENSITIVE TECHNIQUE ON SEMICONDUCTORS.

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