Raman spectroscopy-A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1-xAs

G. Abstreiter; E. Bauser; A. Fischer; K. Ploog

doi:10.1007/BF00885858

Raman spectroscopy-A versatile tool for characterization of thin films and heterostructures of GaAs and Al_xGa_1-xAs

G. Abstreiter, E. Bauser, A. Fischer, K. Ploog

Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

202 Scopus citations

Abstract

It is shown that Raman spectroscopy can provide useful information on characteristic properties of thin crystalline films of compound semiconductors. Crystal orientation, carrier concentration, scattering times of charge carriers, composition of mixed crystals and depth profiles can be studied in thin layers and heterostructures of GaAs and Al_xGa_1-xAs. The advantages and disadvantages of Raman scattering compared to conventional characterization methods are discussed.

Original language	English
Pages (from-to)	345-352
Number of pages	8
Journal	Applied Physics
Volume	16
Issue number	4
DOIs	https://doi.org/10.1007/BF00885858
State	Published - Aug 1978
Externally published	Yes

Keywords

68.55+b
78.30-j

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10.1007/BF00885858

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title = "Raman spectroscopy-A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1-xAs",

abstract = "It is shown that Raman spectroscopy can provide useful information on characteristic properties of thin crystalline films of compound semiconductors. Crystal orientation, carrier concentration, scattering times of charge carriers, composition of mixed crystals and depth profiles can be studied in thin layers and heterostructures of GaAs and AlxGa1-xAs. The advantages and disadvantages of Raman scattering compared to conventional characterization methods are discussed.",

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author = "G. Abstreiter and E. Bauser and A. Fischer and K. Ploog",

year = "1978",

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doi = "10.1007/BF00885858",

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AU - Abstreiter, G.

AU - Bauser, E.

AU - Fischer, A.

AU - Ploog, K.

PY - 1978/8

Y1 - 1978/8

N2 - It is shown that Raman spectroscopy can provide useful information on characteristic properties of thin crystalline films of compound semiconductors. Crystal orientation, carrier concentration, scattering times of charge carriers, composition of mixed crystals and depth profiles can be studied in thin layers and heterostructures of GaAs and AlxGa1-xAs. The advantages and disadvantages of Raman scattering compared to conventional characterization methods are discussed.

AB - It is shown that Raman spectroscopy can provide useful information on characteristic properties of thin crystalline films of compound semiconductors. Crystal orientation, carrier concentration, scattering times of charge carriers, composition of mixed crystals and depth profiles can be studied in thin layers and heterostructures of GaAs and AlxGa1-xAs. The advantages and disadvantages of Raman scattering compared to conventional characterization methods are discussed.

KW - 68.55+b

KW - 78.30-j

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U2 - 10.1007/BF00885858

DO - 10.1007/BF00885858

M3 - Article

AN - SCOPUS:0018005566

SN - 0340-3793

VL - 16

SP - 345

EP - 352

JO - Applied Physics

JF - Applied Physics

IS - 4

ER -

Raman spectroscopy-A versatile tool for characterization of thin films and heterostructures of GaAs and Al_xGa_1-xAs

Abstract

Keywords

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