Raman scattering by wavevector dependent coupled plasmon - LO phonons of n - GaAs

A. Pinczuk; G. Abstreiter; R. Trommer; M. Cardona

doi:10.1016/0038-1098(77)90899-7

Raman scattering by wavevector dependent coupled plasmon - LO phonons of n - GaAs

A. Pinczuk, G. Abstreiter, R. Trommer, M. Cardona

Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

We show that Raman scattering by coupled plasmon-LO phonons of n-GaAs can be used to study the wavevector- and frequency-dependent dielectric function of the charge carriers. It is found that Landau-damping is induced by finite temperatures and carrier lifetime effects. When Landau-damping effects are negligible the results are well described, to the lowest order in wavevector, by the random phase approximation.

Original language	English
Pages (from-to)	959-962
Number of pages	4
Journal	Solid State Communications
Volume	21
Issue number	10
DOIs	https://doi.org/10.1016/0038-1098(77)90899-7
State	Published - Mar 1977
Externally published	Yes

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title = "Raman scattering by wavevector dependent coupled plasmon - LO phonons of n - GaAs",

abstract = "We show that Raman scattering by coupled plasmon-LO phonons of n-GaAs can be used to study the wavevector- and frequency-dependent dielectric function of the charge carriers. It is found that Landau-damping is induced by finite temperatures and carrier lifetime effects. When Landau-damping effects are negligible the results are well described, to the lowest order in wavevector, by the random phase approximation.",

author = "A. Pinczuk and G. Abstreiter and R. Trommer and M. Cardona",

year = "1977",

month = mar,

doi = "10.1016/0038-1098(77)90899-7",

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T1 - Raman scattering by wavevector dependent coupled plasmon - LO phonons of n - GaAs

AU - Pinczuk, A.

AU - Abstreiter, G.

AU - Trommer, R.

AU - Cardona, M.

PY - 1977/3

Y1 - 1977/3

N2 - We show that Raman scattering by coupled plasmon-LO phonons of n-GaAs can be used to study the wavevector- and frequency-dependent dielectric function of the charge carriers. It is found that Landau-damping is induced by finite temperatures and carrier lifetime effects. When Landau-damping effects are negligible the results are well described, to the lowest order in wavevector, by the random phase approximation.

AB - We show that Raman scattering by coupled plasmon-LO phonons of n-GaAs can be used to study the wavevector- and frequency-dependent dielectric function of the charge carriers. It is found that Landau-damping is induced by finite temperatures and carrier lifetime effects. When Landau-damping effects are negligible the results are well described, to the lowest order in wavevector, by the random phase approximation.

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U2 - 10.1016/0038-1098(77)90899-7

DO - 10.1016/0038-1098(77)90899-7

M3 - Article

AN - SCOPUS:0017473877

SN - 0038-1098

VL - 21

SP - 959

EP - 962

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Raman scattering by wavevector dependent coupled plasmon - LO phonons of n - GaAs

Abstract

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