Radiation hardness of cryogenic silicon detectors

T. O. Niinikoski, M. Abreu, W. Bell, P. Berglund, W. De Boer, E. Borchi, K. Borer, M. Bruzzi, S. Buontempo, L. Casagrande, S. Chapuy, V. Cindro, P. Collins, N. D'Ambrosio, C. Da Viá, S. R.H. Devine, B. Dezillie, Z. Dimcovski, V. Eremin, A. EspositoV. Granata, E. Grigoriev, S. Grohmann, F. Hauler, E. Heijne, S. Heising, S. Janos, L. Jungermann, I. Konorov, Z. Li, C. Lourenço, M. Mikuz, V. O'Shea, S. Pagano, V. G. Palmieri, S. Paul, S. Pirollo, K. Pretzl, P. Rato Mendes, G. Ruggiero, K. Smith, P. Sonderegger, P. Sousa, E. Verbitskaya, S. Watts, M. Zavrtanik

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

We shall review test results which show that silicon detectors can withstand at 130K temperature a fluence of 2 × 10 15cm -2 of 1 MeV neutrons, which is about 10 times higher than the fluence tolerated by the best detectors operated close to room temperature. The tests were carried out on simple pad devices and on microstrip detectors of different types. The devices were irradiated at room temperature using reactor neutrons, and in situ at low temperatures using high-energy protons and lead ions. No substantial difference was observed between samples irradiated at low temperature and those irradiated at room temperature, after beneficial annealing. The design of low-mass modules for low-temperature trackers is discussed briefly, together with the cooling circuits for small and large systems.

Original languageEnglish
Pages (from-to)569-582
Number of pages14
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume476
Issue number3
DOIs
StatePublished - 11 Jan 2002
Externally publishedYes
EventProceedings of the 3rd. International Conference on Radiation Effects on Semiconductor (RESMDD-2000-F2K) - Firenze, Italy
Duration: 28 Jun 200030 Jun 2000

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