Quantum transport in chemically functionalized graphene at high magnetic field: Defect-induced critical states and breakdown of electron-hole symmetry

Nicolas Leconte, Frank Ortmann, Alessandro Cresti, Jean Christophe Charlier, Stephan Roche

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Unconventional magnetotransport fingerprints in the quantum Hall regime (with applied magnetic fields from one to several tens of Tesla) in chemically functionalized graphene are reported. Upon chemical adsorption of monoatomic oxygen (from 0.5% to few percents), the electron-hole symmetry of Landau levels (LLs) is broken, while a double-peaked conductivity develops at lowenergy, resulting from the formation of critical states conveyed by the random network of defects-induced impurity states. Scaling analysis hints towards the existence of an additional zero-energy quantized Hall conductance plateau, which is here not connected to degeneracy lifting of LLs by sublattice symmetry breaking. This singularly contrasts with usual interpretation, and unveils a new playground for tailoring the fundamental characteristics of the quantum Hall effect.

Original languageEnglish
Article number21001
Journal2D Materials
Volume1
Issue number2
DOIs
StatePublished - 1 Sep 2014
Externally publishedYes

Keywords

  • Critical states
  • Functionalization
  • Graphene
  • Localization
  • Oxygen
  • Quantum Hall effect

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