Quantum coherent dynamics of free carriers in semiconductors

C. Fuerst, A. Leitenstorfer, A. Laubereau

Research output: Contribution to journalConference articlepeer-review

Abstract

Synchronized femtosecond pulses of different wavelength and bandwidth are used to investigate intraband and interband coherent effects in polar semiconductors. At low excitation densities the relaxation of nonthermal electron distributions by spontaneous emission of LO phonons in GaAs is monitored. Quantum kinetic behaviour of the dynamics beyond the semiclassical Boltzmann equation is demonstrated for the first time. Violation of the energy conservation as well as memory effects are shown to occur on an ultrashort time scale of 100 fs. For strong excitation we present the first observation of Rabi-oscillations of the occupation density in the absorption continuum of InP. Despite high carrier densities exceeding 1018cm-3 dephasing times are long enough to allow for the appearance of two strongly damped Rabi-cycles at a peak intensity of the pump pulses of 17 GW/cm2.

Original languageEnglish
Pages (from-to)96-104
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3735
StatePublished - 1999
EventProceedings of the 1998 Nonlinear Optical Phenomena and Coherent Optics in Information Technologies, ICONO-98 - Moscow, RUS
Duration: 29 Jun 19983 Jul 1998

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