Quantized conductance in a Si/Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena

D. Többen; D. A. Wharam; G. Abstreiter; J. P. Kotthaus; F. Schäffler

doi:10.1016/0038-1101(95)00298-7

Quantized conductance in a Si/Si_0.7Ge_0.3 split-gate device and impurity-related magnetotransport phenomena

D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We have defined a quantum point-contact by the split-gate technique in a Si/SiGe heterostructure containing a two-dimensional electron gas with an elastic mean free path of about 1.3 μm. The conductance of this device shows typical steps very close to multiples of 4e₂ h^-1. Upon application of a perpendicular magnetic field the spin and valley degeneracies are lifted and magnetic depopulation of the one-dimensional subbands can be observed. The appearance of Aharonov-Bohm oscillations for B ≥ 2 T and of resonant tunneling peaks close to "pinch-off" indicates the presence of impurities close to the constriction.

Original language	English
Pages (from-to)	405-408
Number of pages	4
Journal	Solid-State Electronics
Volume	40
Issue number	1-8
DOIs	https://doi.org/10.1016/0038-1101(95)00298-7
State	Published - 1996

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title = "Quantized conductance in a Si/Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena",

abstract = "We have defined a quantum point-contact by the split-gate technique in a Si/SiGe heterostructure containing a two-dimensional electron gas with an elastic mean free path of about 1.3 μm. The conductance of this device shows typical steps very close to multiples of 4e2 h-1. Upon application of a perpendicular magnetic field the spin and valley degeneracies are lifted and magnetic depopulation of the one-dimensional subbands can be observed. The appearance of Aharonov-Bohm oscillations for B ≥ 2 T and of resonant tunneling peaks close to {"}pinch-off{"} indicates the presence of impurities close to the constriction.",

author = "D. T{\"o}bben and Wharam, {D. A.} and G. Abstreiter and Kotthaus, {J. P.} and F. Sch{\"a}ffler",

year = "1996",

doi = "10.1016/0038-1101(95)00298-7",

language = "English",

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journal = "Solid-State Electronics",

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T1 - Quantized conductance in a Si/Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena

AU - Többen, D.

AU - Wharam, D. A.

AU - Abstreiter, G.

AU - Kotthaus, J. P.

AU - Schäffler, F.

PY - 1996

Y1 - 1996

N2 - We have defined a quantum point-contact by the split-gate technique in a Si/SiGe heterostructure containing a two-dimensional electron gas with an elastic mean free path of about 1.3 μm. The conductance of this device shows typical steps very close to multiples of 4e2 h-1. Upon application of a perpendicular magnetic field the spin and valley degeneracies are lifted and magnetic depopulation of the one-dimensional subbands can be observed. The appearance of Aharonov-Bohm oscillations for B ≥ 2 T and of resonant tunneling peaks close to "pinch-off" indicates the presence of impurities close to the constriction.

AB - We have defined a quantum point-contact by the split-gate technique in a Si/SiGe heterostructure containing a two-dimensional electron gas with an elastic mean free path of about 1.3 μm. The conductance of this device shows typical steps very close to multiples of 4e2 h-1. Upon application of a perpendicular magnetic field the spin and valley degeneracies are lifted and magnetic depopulation of the one-dimensional subbands can be observed. The appearance of Aharonov-Bohm oscillations for B ≥ 2 T and of resonant tunneling peaks close to "pinch-off" indicates the presence of impurities close to the constriction.

UR - http://www.scopus.com/inward/record.url?scp=0039609895&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(95)00298-7

DO - 10.1016/0038-1101(95)00298-7

M3 - Article

AN - SCOPUS:0039609895

SN - 0038-1101

VL - 40

SP - 405

EP - 408

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1-8

ER -

Quantized conductance in a Si/Si_0.7Ge_0.3 split-gate device and impurity-related magnetotransport phenomena

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