Quantization of photoexcited electrons in GaAs nipi crystals

G. Abstreiter; G. H. Döhler; H. Künzel; D. Olego; K. Ploog; P. Ruden; H. J. Stolz

doi:10.1016/0039-6028(82)90635-5

Quantization of photoexcited electrons in GaAs nipi crystals

G. Abstreiter
, G. H. Döhler
, H. Künzel
, D. Olego
, K. Ploog
, P. Ruden
, H. J. Stolz

TUM Emeriti of Excellence

Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Original language	English
Pages (from-to)	479-480
Number of pages	2
Journal	Surface Science
Volume	113
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(82)90635-5
State	Published - 1 Jan 1982

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title = "Quantization of photoexcited electrons in GaAs nipi crystals",

author = "G. Abstreiter and D{\"o}hler, \{G. H.\} and H. K{\"u}nzel and D. Olego and K. Ploog and P. Ruden and Stolz, \{H. J.\}",

year = "1982",

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doi = "10.1016/0039-6028(82)90635-5",

language = "English",

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T1 - Quantization of photoexcited electrons in GaAs nipi crystals

AU - Abstreiter, G.

AU - Döhler, G. H.

AU - Künzel, H.

AU - Olego, D.

AU - Ploog, K.

AU - Ruden, P.

AU - Stolz, H. J.

PY - 1982/1/1

Y1 - 1982/1/1

UR - https://www.scopus.com/pages/publications/49049137439

U2 - 10.1016/0039-6028(82)90635-5

DO - 10.1016/0039-6028(82)90635-5

M3 - Article

AN - SCOPUS:49049137439

SN - 0039-6028

VL - 113

SP - 479

EP - 480

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Quantization of photoexcited electrons in GaAs nipi crystals

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