Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy

M. Schowalter; A. Rosenauer; D. Gerthsen; M. Grau; M. C. Amann

doi:10.1063/1.1618380

Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy

M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, M. C. Amann

Chair of Semiconductor Technology

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Abstract

Influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells was studied. Transmission electron microscopy and lattice fringe analysis were used. Results showed segregation of Sb in GaAs-on-GaSb layers with a differential nominal thickness.

Original language	English
Pages (from-to)	3123-3125
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	15
DOIs	https://doi.org/10.1063/1.1618380
State	Published - 13 Oct 2003

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@article{30aed47c3f8148afbea256f917b17325,

title = "Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy",

abstract = "Influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells was studied. Transmission electron microscopy and lattice fringe analysis were used. Results showed segregation of Sb in GaAs-on-GaSb layers with a differential nominal thickness.",

author = "M. Schowalter and A. Rosenauer and D. Gerthsen and M. Grau and Amann, \{M. C.\}",

year = "2003",

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journal = "Applied Physics Letters",

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T1 - Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy

AU - Schowalter, M.

AU - Rosenauer, A.

AU - Gerthsen, D.

AU - Grau, M.

AU - Amann, M. C.

PY - 2003/10/13

Y1 - 2003/10/13

N2 - Influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells was studied. Transmission electron microscopy and lattice fringe analysis were used. Results showed segregation of Sb in GaAs-on-GaSb layers with a differential nominal thickness.

AB - Influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells was studied. Transmission electron microscopy and lattice fringe analysis were used. Results showed segregation of Sb in GaAs-on-GaSb layers with a differential nominal thickness.

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U2 - 10.1063/1.1618380

DO - 10.1063/1.1618380

M3 - Article

AN - SCOPUS:0242272666

SN - 0003-6951

VL - 83

SP - 3123

EP - 3125

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy

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