Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy

M. Schowalter, A. Rosenauer, D. Gerthsen, M. Grau, M. C. Amann

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells was studied. Transmission electron microscopy and lattice fringe analysis were used. Results showed segregation of Sb in GaAs-on-GaSb layers with a differential nominal thickness.

Original languageEnglish
Pages (from-to)3123-3125
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number15
DOIs
StatePublished - 13 Oct 2003

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