Abstract
We investigate influences of growth interruptions on the morphology of GaSb/GaAs quantum wells by transmission electron microscopy. Two samples with five GaSb quantum wells with different thickness were grown by molecular beam epitaxy on GaAs (100). In one sample, the growth was interrupted for 60 s before and after each quantum well. Sb concentration profiles were deduced with composition evaluation by lattice fringe analysis and strain state analysis. We found strong indications for segregation of Sb with an efficiency of R=0.78±0.03 for the 60 s sample. The growth interruption decreases the amount of GaSb contained in the wells.
| Original language | English |
|---|---|
| Pages (from-to) | 147-150 |
| Number of pages | 4 |
| Journal | Design and Nature |
| Volume | 6 |
| State | Published - 2004 |
| Event | Design and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece Duration: 28 Jun 2004 → 30 Jun 2004 |