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Pure spin current transport in gallium doped zinc oxide
Matthias Althammer
, Joynarayan Mukherjee
, Stephan Geprägs
, Sebastian T.B. Goennenwein
, Matthias Opel
, M. S. Ramachandra Rao
,
Rudolf Gross
Chair of Technical Physics
Walther-Meissner-Institut
Technical University of Munich
Indian Institute of Technology Madras
Nanosystems Initiative Munich
Research output
:
Contribution to journal
›
Article
›
peer-review
2
Scopus citations
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Keyphrases
Bismuth-substituted Yttrium Iron Garnet
33%
Current Transport
100%
Doped Zinc Oxide
16%
Field Dependence
16%
Gallium-doped Zinc Oxide
100%
Interface Resistance
16%
Interlayer Thickness
16%
Order of Magnitude
16%
Oxide Interlayer
50%
Oxide Layer
16%
Pure Spin Current
100%
Spin Diffusion
16%
Spin Hall Magnetoresistance
100%
Trilayer
33%
Trilayer Structure
16%
Zinc Oxide
16%
Material Science
Bismuth
28%
Gallium
100%
Garnet
28%
Magnetoresistance
85%
Platinum
14%
Spin Diffusion
14%
Thin Films
14%
Yttrium
28%
Zinc Oxide
100%
Physics
Magnetoresistance
85%
Spin Diffusion
14%
Thin Films
14%
Yttrium-Iron Garnet
28%
Zinc Oxide
100%