Pulsed-laser crystallized highly conductive boron-doped microcrystalline silicon

C. E. Nebel, B. Dahlheimer, U. Karrer, M. Stutzmann

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

The preparation of seed lattices, using three interfering beams (TIB) from a pulsed Nd:YAG laser in a-Si layers of 100 to 400 nm thickness is introduced and applied for seeded laser or thermally induced crystallization of a-Si on Corning 7059 glass. The structural and electronic properties of the μc-Si layers are investigated by X-ray, electron- and atomic force microscopy, Hall and conductivity measurements. In highly boron-doped μc-Si, grains up to 1.3 μm in diameter are detected, giving rise to conductivities of ≈ 2000 S/cm and hole mobilities of ≈ 10 cm2/Vs.CV Semiconducting silicon

Original languageEnglish
Pages (from-to)331-336
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume467
DOIs
StatePublished - 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: 31 Mar 19974 Apr 1997

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