TY - JOUR
T1 - Pulsed-laser crystallized highly conductive boron-doped microcrystalline silicon
AU - Nebel, C. E.
AU - Dahlheimer, B.
AU - Karrer, U.
AU - Stutzmann, M.
PY - 1997
Y1 - 1997
N2 - The preparation of seed lattices, using three interfering beams (TIB) from a pulsed Nd:YAG laser in a-Si layers of 100 to 400 nm thickness is introduced and applied for seeded laser or thermally induced crystallization of a-Si on Corning 7059 glass. The structural and electronic properties of the μc-Si layers are investigated by X-ray, electron- and atomic force microscopy, Hall and conductivity measurements. In highly boron-doped μc-Si, grains up to 1.3 μm in diameter are detected, giving rise to conductivities of ≈ 2000 S/cm and hole mobilities of ≈ 10 cm2/Vs.CV Semiconducting silicon
AB - The preparation of seed lattices, using three interfering beams (TIB) from a pulsed Nd:YAG laser in a-Si layers of 100 to 400 nm thickness is introduced and applied for seeded laser or thermally induced crystallization of a-Si on Corning 7059 glass. The structural and electronic properties of the μc-Si layers are investigated by X-ray, electron- and atomic force microscopy, Hall and conductivity measurements. In highly boron-doped μc-Si, grains up to 1.3 μm in diameter are detected, giving rise to conductivities of ≈ 2000 S/cm and hole mobilities of ≈ 10 cm2/Vs.CV Semiconducting silicon
UR - http://www.scopus.com/inward/record.url?scp=0031351333&partnerID=8YFLogxK
U2 - 10.1557/proc-467-331
DO - 10.1557/proc-467-331
M3 - Conference article
AN - SCOPUS:0031351333
SN - 0272-9172
VL - 467
SP - 331
EP - 336
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1997 MRS Spring Symposium
Y2 - 31 March 1997 through 4 April 1997
ER -