Properties of thick ZnO layers on oxidized silicon

F. Moeller; T. Vandahl; D. C. Malocha; N. Schwesinger; W. Buff

doi:10.1109/ultsym.1994.401618

Properties of thick ZnO layers on oxidized silicon

F. Moeller, T. Vandahl, D. C. Malocha, N. Schwesinger, W. Buff

Ilmenau University of Technology

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

Properties of thick ZnO layers having a thickness of about 20μm will be discussed in this paper. To achieve ZnO layers with a high resistance, a new sputtering method with a ramp shaped and cycled power process mode was developed. It is shown that it is possible to obtain weak textured 〈002〉-ZnO layers at deposition rates of about 130nm/min on (100)-Si-substrates with a thin SiO₂-film. The specific resistance of the layers was in a range of 2.0*10¹⁰Ωcm to 1.5*10¹¹Ωcm. The internal stress of the layers, calculated by the measurement of the deflection of the whole wafer, was about 3.0MPa. Initial measurements have shown that there are possibilities to excite surface acoustic waves in layered structures. This paper presents calculated and measured results for structures with thick ZnO layers. Measurements of SAW properties using thick ZnO layered structures will be shown. Also presented are results on the quality of the ZnO films and the specifics of the deposition process.

Original language	English
Pages (from-to)	403-406
Number of pages	4
Journal	Proceedings - IEEE Ultrasonics Symposium
Volume	1
DOIs	https://doi.org/10.1109/ultsym.1994.401618
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 IEEE Ultrasonics Symposium. Part 1 (of 3) - Cannes, Fr Duration: 1 Nov 1994 → 4 Nov 1994

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title = "Properties of thick ZnO layers on oxidized silicon",

abstract = "Properties of thick ZnO layers having a thickness of about 20μm will be discussed in this paper. To achieve ZnO layers with a high resistance, a new sputtering method with a ramp shaped and cycled power process mode was developed. It is shown that it is possible to obtain weak textured 〈002〉-ZnO layers at deposition rates of about 130nm/min on (100)-Si-substrates with a thin SiO2-film. The specific resistance of the layers was in a range of 2.0*1010Ωcm to 1.5*1011Ωcm. The internal stress of the layers, calculated by the measurement of the deflection of the whole wafer, was about 3.0MPa. Initial measurements have shown that there are possibilities to excite surface acoustic waves in layered structures. This paper presents calculated and measured results for structures with thick ZnO layers. Measurements of SAW properties using thick ZnO layered structures will be shown. Also presented are results on the quality of the ZnO films and the specifics of the deposition process.",

author = "F. Moeller and T. Vandahl and Malocha, {D. C.} and N. Schwesinger and W. Buff",

year = "1994",

doi = "10.1109/ultsym.1994.401618",

language = "English",

volume = "1",

pages = "403--406",

journal = "Proceedings - IEEE Ultrasonics Symposium",

issn = "1051-0117",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 IEEE Ultrasonics Symposium. Part 1 (of 3) ; Conference date: 01-11-1994 Through 04-11-1994",

}

TY - JOUR

T1 - Properties of thick ZnO layers on oxidized silicon

AU - Moeller, F.

AU - Vandahl, T.

AU - Malocha, D. C.

AU - Schwesinger, N.

AU - Buff, W.

PY - 1994

Y1 - 1994

N2 - Properties of thick ZnO layers having a thickness of about 20μm will be discussed in this paper. To achieve ZnO layers with a high resistance, a new sputtering method with a ramp shaped and cycled power process mode was developed. It is shown that it is possible to obtain weak textured 〈002〉-ZnO layers at deposition rates of about 130nm/min on (100)-Si-substrates with a thin SiO2-film. The specific resistance of the layers was in a range of 2.0*1010Ωcm to 1.5*1011Ωcm. The internal stress of the layers, calculated by the measurement of the deflection of the whole wafer, was about 3.0MPa. Initial measurements have shown that there are possibilities to excite surface acoustic waves in layered structures. This paper presents calculated and measured results for structures with thick ZnO layers. Measurements of SAW properties using thick ZnO layered structures will be shown. Also presented are results on the quality of the ZnO films and the specifics of the deposition process.

AB - Properties of thick ZnO layers having a thickness of about 20μm will be discussed in this paper. To achieve ZnO layers with a high resistance, a new sputtering method with a ramp shaped and cycled power process mode was developed. It is shown that it is possible to obtain weak textured 〈002〉-ZnO layers at deposition rates of about 130nm/min on (100)-Si-substrates with a thin SiO2-film. The specific resistance of the layers was in a range of 2.0*1010Ωcm to 1.5*1011Ωcm. The internal stress of the layers, calculated by the measurement of the deflection of the whole wafer, was about 3.0MPa. Initial measurements have shown that there are possibilities to excite surface acoustic waves in layered structures. This paper presents calculated and measured results for structures with thick ZnO layers. Measurements of SAW properties using thick ZnO layered structures will be shown. Also presented are results on the quality of the ZnO films and the specifics of the deposition process.

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U2 - 10.1109/ultsym.1994.401618

DO - 10.1109/ultsym.1994.401618

M3 - Conference article

AN - SCOPUS:0028750834

SN - 1051-0117

VL - 1

SP - 403

EP - 406

JO - Proceedings - IEEE Ultrasonics Symposium

JF - Proceedings - IEEE Ultrasonics Symposium

T2 - Proceedings of the 1994 IEEE Ultrasonics Symposium. Part 1 (of 3)

Y2 - 1 November 1994 through 4 November 1994

ER -

Properties of thick ZnO layers on oxidized silicon

Abstract

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