Properties of grain boundaries in laser-crystallized silicon thin films

C. Eisele; T. Bach; C. E. Nebel; M. Stutzmann

doi:10.1016/S0022-3093(01)00978-4

Properties of grain boundaries in laser-crystallized silicon thin films

C. Eisele, T. Bach, C. E. Nebel, M. Stutzmann

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Laser crystallization of thin amorphous silicon films was done using a two-beam-interference and a more complex holographic crystallization technique to stimulate lateral grain growth. The preparation and application of the digital holograms used for this purpose is described. The grain boundaries dominate the electronic transport in both cases. Single grain boundaries are identified, and a diffusion length up to 1 μm is determined by laser beam induced current (LBIC) measurements. The grain boundary barrier height is determined for both crystallization techniques and is between 120 and 380 meV.

Original language	English
Pages (from-to)	726-730
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	299-302
DOIs	https://doi.org/10.1016/S0022-3093(01)00978-4
State	Published - Apr 2002

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title = "Properties of grain boundaries in laser-crystallized silicon thin films",

abstract = "Laser crystallization of thin amorphous silicon films was done using a two-beam-interference and a more complex holographic crystallization technique to stimulate lateral grain growth. The preparation and application of the digital holograms used for this purpose is described. The grain boundaries dominate the electronic transport in both cases. Single grain boundaries are identified, and a diffusion length up to 1 μm is determined by laser beam induced current (LBIC) measurements. The grain boundary barrier height is determined for both crystallization techniques and is between 120 and 380 meV.",

author = "C. Eisele and T. Bach and Nebel, {C. E.} and M. Stutzmann",

year = "2002",

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doi = "10.1016/S0022-3093(01)00978-4",

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journal = "Journal of Non-Crystalline Solids",

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T1 - Properties of grain boundaries in laser-crystallized silicon thin films

AU - Eisele, C.

AU - Bach, T.

AU - Nebel, C. E.

AU - Stutzmann, M.

PY - 2002/4

Y1 - 2002/4

N2 - Laser crystallization of thin amorphous silicon films was done using a two-beam-interference and a more complex holographic crystallization technique to stimulate lateral grain growth. The preparation and application of the digital holograms used for this purpose is described. The grain boundaries dominate the electronic transport in both cases. Single grain boundaries are identified, and a diffusion length up to 1 μm is determined by laser beam induced current (LBIC) measurements. The grain boundary barrier height is determined for both crystallization techniques and is between 120 and 380 meV.

AB - Laser crystallization of thin amorphous silicon films was done using a two-beam-interference and a more complex holographic crystallization technique to stimulate lateral grain growth. The preparation and application of the digital holograms used for this purpose is described. The grain boundaries dominate the electronic transport in both cases. Single grain boundaries are identified, and a diffusion length up to 1 μm is determined by laser beam induced current (LBIC) measurements. The grain boundary barrier height is determined for both crystallization techniques and is between 120 and 380 meV.

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U2 - 10.1016/S0022-3093(01)00978-4

DO - 10.1016/S0022-3093(01)00978-4

M3 - Article

AN - SCOPUS:0036531794

SN - 0022-3093

VL - 299-302

SP - 726

EP - 730

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -

Properties of grain boundaries in laser-crystallized silicon thin films

Abstract

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