Propagation and focusing of high-frequency rayleigh phonons

C. Höss, H. Kinder

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Abstract

We report on the experimental observation of high-frequency Rayleigh phonons on Si(0 0 1) surfaces. By use of the phonon-imaging technique we can measure the spatial phonon flux distribution of Rayleigh phonons in the Si(0 0 1) surface. Since the mean free path of Rayleigh phonons is limited by surface-roughness-induced scattering mainly into bulk phonons, a micro-imaging experiment was performed. As a suitable detector we use ion implanted Si : P bolometers of 18 μm in diameter and 200 nm in depth, operated at 1 K. To obtain as clean surfaces as possible, the technique of laser annealing in situ was applied. Experimental results showing propagation distances of several hundred micrometers for Rayleigh phonons are presented.

Original languageEnglish
Pages (from-to)706-709
Number of pages4
JournalPhysica B: Condensed Matter
Volume219-220
Issue number1-4
DOIs
StatePublished - 1 Apr 1996

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