Prismatic quantum heterostructures synthesized on molecular-beam epitaxy GaAs nanowires

Anna Fontcuberta I Morral, Dançe Spirkoska, Jordi Arbiol, Matthias Heigoldt, Joan Ramon Morante, Gerhard Abstreiter

Research output: Contribution to journalArticlepeer-review

138 Scopus citations


A study was conducted to demonstrate a method for the growth of prismatic quantum heterostructures synthesized on GaAs nanowires by using molecular-beam epitaxy (MBE). The study used molecular-beam epitaxy to produce ultrapure nanowires and quantum heterostructures on the nanowires. The study avoided the use of gold as nucleation seed for the nanowires. The study found that the geometry of the epitaxy process and the deposition rate on nanowire facet depends in the orientation. The study also found that the effective thickness of the facets depend on the relative angle to the Ga beam. The study showed that uniform deposition of each side facet of a nanowire can be added with intrinsic functional purposes. The study proved that MBE can be used to grow quantum heterostructures on the facets of the wires.

Original languageEnglish
Pages (from-to)899-903
Number of pages5
Issue number7
StatePublished - Jul 2008


  • Molecular beam epitaxy
  • Nanowires
  • Photoluminescence
  • Quantum wells


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