Pressure dependence of the optical phonons and transverse effective charge in 3C-SiC

Diego Olego, M. Cardona, P. Vogl

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212 Scopus citations

Abstract

The first-order Raman spectra of 3C-SiC have been measured as a function of hydrostatic pressure up to 22.5 GPa in a diamond anvil cell. The mode-Grneisen parameters of the LO and TO phonons at were determined. We observed an increase of the LO-TO splitting with pressure from which an increase of the transverse effective charge upon compression results. We discuss this behavior of the transverse effective charge under lattice compression in terms of a microscopic pseudopotential calculation and of the bond-orbital model. Calculations of effective charges for other hypothetical IV-IV semiconductors are presented.

Original languageEnglish
Pages (from-to)3878-3888
Number of pages11
JournalPhysical Review B
Volume25
Issue number6
DOIs
StatePublished - 1982
Externally publishedYes

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