Pressure dependence of the direct absorption edge of InP

H. Müller, R. Trommer, M. Cardona, P. Vogl

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The variation of the lowest direct absorption edge of InP with pressure has been measured at room temperature with a diamond anvil cell for pressures up to the phase transition (100 kbar). Both transmission and luminescence techniques were used. The gap varies sublinearly with pressure but linearly with lattice constant: the gap deformation potential so obtained is a=-6.35±0.05 eV. This result is discussed in the light of theoretical calculations. The observed luminescence intensity remains nearly constant as a function of pressure up to 90 kbar. At this pressure the efficiency begins to decrease thus signaling the crossing of the Γ and X conduction-band minima which we estimate to occur at 104 ± 1 kbar. The pressure coefficient of the Γ-X indirect gap is found to be -(3 ± 1) × 10-6 eV/bar.

Original languageEnglish
Pages (from-to)4879-4883
Number of pages5
JournalPhysical Review B
Issue number10
StatePublished - 1980
Externally publishedYes


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