Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon

Günther Vogg; Nikta Zamanzadeh-Hanebuth; Martin S. Brandt; Martin Stutzmann; Martin Albrecht

doi:10.1007/PL00010177

Preparation and characterization of epitaxial CaSi₂ and siloxene layers on silicon

Günther Vogg, Nikta Zamanzadeh-Hanebuth, Martin S. Brandt, Martin Stutzmann, Martin Albrecht

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Epitaxial growth of thin CaSi₂ films on various silicon surfaces is described. Transforming the silicide into siloxene leads to high quality epitaxial siloxene films with different orientations. The structural quality of CaSi₂ and siloxene is investigated by transmission and scanning electron microscopy as well as X-ray diffraction analysis. Siloxene on (110)-Si enables direct observation of the anisotropic vibrational properties by IR transmission measurements. A diode structure was realized with siloxene by using contacts with different work functions as charge carrier injectors.

Original language	English
Pages (from-to)	79-87
Number of pages	9
Journal	Monatshefte für Chemie
Volume	130
Issue number	1
DOIs	https://doi.org/10.1007/PL00010177
State	Published - 1999

Keywords

Anisotropy of IR absorption
CaSi epitaxy
Diode structure
Structural analysis

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10.1007/PL00010177

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title = "Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon",

abstract = "Epitaxial growth of thin CaSi2 films on various silicon surfaces is described. Transforming the silicide into siloxene leads to high quality epitaxial siloxene films with different orientations. The structural quality of CaSi2 and siloxene is investigated by transmission and scanning electron microscopy as well as X-ray diffraction analysis. Siloxene on (110)-Si enables direct observation of the anisotropic vibrational properties by IR transmission measurements. A diode structure was realized with siloxene by using contacts with different work functions as charge carrier injectors.",

keywords = "Anisotropy of IR absorption, CaSi epitaxy, Diode structure, Structural analysis",

author = "G{\"u}nther Vogg and Nikta Zamanzadeh-Hanebuth and Brandt, {Martin S.} and Martin Stutzmann and Martin Albrecht",

year = "1999",

doi = "10.1007/PL00010177",

language = "English",

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pages = "79--87",

journal = "Monatshefte f{\"u}r Chemie",

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T1 - Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon

AU - Vogg, Günther

AU - Zamanzadeh-Hanebuth, Nikta

AU - Brandt, Martin S.

AU - Stutzmann, Martin

AU - Albrecht, Martin

PY - 1999

Y1 - 1999

N2 - Epitaxial growth of thin CaSi2 films on various silicon surfaces is described. Transforming the silicide into siloxene leads to high quality epitaxial siloxene films with different orientations. The structural quality of CaSi2 and siloxene is investigated by transmission and scanning electron microscopy as well as X-ray diffraction analysis. Siloxene on (110)-Si enables direct observation of the anisotropic vibrational properties by IR transmission measurements. A diode structure was realized with siloxene by using contacts with different work functions as charge carrier injectors.

AB - Epitaxial growth of thin CaSi2 films on various silicon surfaces is described. Transforming the silicide into siloxene leads to high quality epitaxial siloxene films with different orientations. The structural quality of CaSi2 and siloxene is investigated by transmission and scanning electron microscopy as well as X-ray diffraction analysis. Siloxene on (110)-Si enables direct observation of the anisotropic vibrational properties by IR transmission measurements. A diode structure was realized with siloxene by using contacts with different work functions as charge carrier injectors.

KW - Anisotropy of IR absorption

KW - CaSi epitaxy

KW - Diode structure

KW - Structural analysis

UR - http://www.scopus.com/inward/record.url?scp=0033479412&partnerID=8YFLogxK

U2 - 10.1007/PL00010177

DO - 10.1007/PL00010177

M3 - Article

AN - SCOPUS:0033479412

SN - 0026-9247

VL - 130

SP - 79

EP - 87

JO - Monatshefte für Chemie

JF - Monatshefte für Chemie

IS - 1

ER -

Preparation and characterization of epitaxial CaSi₂ and siloxene layers on silicon

Abstract

Keywords

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